SOT89 PNP SILICON PLANAR
MEDIUM POWER TRANSISTOR
BC869
ISSUE 4 - J ANUARY 1996
✪
FEATURES
*
SUITABLE FOR GENERAL AF APPLICATIONS AND
C
CLASS B AUDIO OUTPUT STAGES UP TO 3W
HIGH hFE AND LOW SATURATION VOLTAGE
*
COMPLEMENTARY TYPE -
PARTMARKING DETAILS -
BC868 (NPN)
E
C
BC869
- CEC
B
BC869-16 - CHC
BC869-25 - CJ C
SOT89
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
ICM
VALUE
UNIT
V
Collector-Base Voltage
-25
Collector-Em itter Voltage
-20
V
Em itter-Base Voltage
-5
V
Peak Pulse Current
-2
A
Continuous Collector Current
Power Dissipation at Tam b =25°C
Operating and Storage Tem perature Range
ELECTRICAL CHARACTERISTICS (at T
IC
-1
A
Ptot
1
W
°C
Tj:Tstg
-65 to +150
= 25°C unless otherw ise stated).
am b
PARAMETER
SYMBOL MIN.
TYP.
MAX.
UNIT
V
CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
-25
-20
-5
IC=-100µA
Collector-Em itter
Breakdown Voltage
V
V
IC=-10m A*
IE=-10µA
Em itter-Base
Breakdown Voltage
Collector Cut-Off
Current
-10
-1
VCB = -25V
µA
m A
o
VCB = -25V,Tam b =150 C
Em itter Cut-Off Current
IEBO
-10
VEB=-5V
µA
Collector-Em itter
Saturation Voltage
VCE(sat)
-0.5
V
IC=-1A,IB=-100m A*
Base-Em itter Turn-On
Voltage
VBE(on)
hFE
-1.0
V
IC=-1A, VCE=-1V*
Static Forward Current
Transfer Ratio
50
85
60
IC=-5m A, VCE=-10V*
IC=-500m A, VCE=-1V*
IC=-1A, VCE=-1V*
375
BC869-16 100
BC869-25 160
250
375
IC=-500m A, VCE=-1V*
IC=-500m A, VCE=-1V*
Transition Frequency
Output Capacitance
fT
60
45
MHz
pF
IC=-10m A, VCE=-5V
f = 35MHz
Cobo
VCB=-10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
For typical characteristics graphs see FMMT549 datasheet
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