Datasheet > BC869-25

BC869-25

更新时间： 2024-09-24 12:53:47

品牌	Logo	应用领域
TYSEMI		晶体晶体管放大器
页数	文件大小	规格书
2页	107K
描述
High current. Three current gain selections. 1.2 W total power dissipation.

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BC869-25 数据手册

SMD Type

Transistors

Product specification

BC869

Features

High current.

Three current gain selections.

1.2 W total power dissipation.

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

Unit

-32

-20

-5

Collector current

-1

Peak collector current

Peak base current

I^CM

-2

I^BM

-200

0.5

Total power dissipation

*1 and *2

P^tot

*1 and *3

*1 and *4

0.85

1.2

Storage temperature

T^stg

T^j

-65 to +150

150

Junction temperature

Operating ambient temperature

R^amb

-65 to +150

250

Thermal resistance from junction to ambient *1 and *2

*1 and *3

K/W

R^th(j-a)

147

*1 and *4

104

Thermal resistance from junction to solder point

*1.Refer to SOT89 standard mounting conditions.

R^th(j-s)

*2.Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated footprint.

*3.Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 1 cm².

*4.Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 6 cm².

4008-318-123

http://www.twtysemi.com

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sales@twtysemi.com

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