Datasheet > BC860A-Z4E

BC860A-Z4E

更新时间： 2024-02-21 20:28:00

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描述
SOT23 PNP SILICON PLANAR GENERAL PURPOSE TRANSISTORS

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BC860A-Z4E 数据手册

SOT23 PNP SILICON PLANAR

BC856

BC858

BC860

BC857

BC859

GENERAL PURPOSE TRANSISTORS

ISSUE 6 - APRIL 1997

PARTMARKING DETAILS

BC856A3A BC858C3L

BC856BZ3B BC859AZ4A BC857

BC857AZ3E BC859B4B BC858

COMPLEMENTARY TYPES

BC856

BC846

BC847

BC848

BC849

BC850

BC857B3F

BC857C3G

BC858A3J

BC858B3K

BC859CZ4C BC859

BC860AZ4E BC860

BC860B4F

SOT23

BC860C4GZ

ABSOLUTE MAXIMUM RATINGS.

UNIT

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Peak Pulse Current

SYMBOL

BC856

-80

BC857

-50

BC858

-30

BC859

-30

BC860

-50

V_CBO

V_CES

V_CEO

V_EBO

I_C

-80

-50

-30

-50

-65

-45

-30

-45

-5

-100

-200

330

°C

I_EM

Base Current

I_BM

Base Current

I_EM

Power Dissipation at T_amb=25°C

P_tot

Operating and Storage

Temperature Range

T_j:T_stg

-55 to +150

ELECTRICAL CHARACTERISTICS (at T

= 25°C unless otherwise stated).

amb

UNIT CONDITIONS.

BC856 BC857 BC858 BC859 BC860

PARAMETER

SYMBOL

Collector Cut-Off Current I_CBO

Max

V_CB= -30V

_CB= -30V

Tamb=150°C

-15

-4

µA

Collector-Emitter

Saturation Voltage

V_CE(sat)Typ

-75 -75

-75

Max. -300 -300 -300 -250 -250

-75 -75

mV I_C=-10mA,

I_B=-0.5mA

Typ

Max.

-250

-650

mV I_C=-100mA,

I_B=-5mA

Typ

Max.

-300

-600

mV I_C=-10mA*

Base-Emitter

Saturation Voltage

V_BE(sat)

-700

mV I_C=-10mA,

I_B=-0.5mA

Typ

-850

mV I_C=-100mA,

I_B=-5mA

Typ

Base-Emitter Voltage

V_BE

-600 -600 -600 -580 -580 mV I_C=-2mA

Min

Typ

Max

-650 -650 -650 -650 -650

-750 -750 -750 -750 -750

V_CE=-5V

-820

mV I_C=-10mA

V_CE=-5V

Max

* Collector-Emitter Saturation Voltage at I_C= 10mA for the characteristics going through the

operating point I_C= 11mA, V_CE= 1V at constant base current.

12 3

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