Datasheet > BC860BP

BC860BP

更新时间： 2024-09-22 14:51:27

品牌	Logo	应用领域
先科 - SWST		晶体管
页数	文件大小	规格书
5页	860K
描述
小信号晶体管

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中文翻译

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数据手册

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BC860BP 数据手册

BC856BP…BC860BP

PNP Silicon Epitaxial Transistor

Applications

• For switching and amplifier applications

Absolute Maximum Ratings (T_a= 25 C)

Parameter

Symbol

Value

Unit

Collector Base Voltage

BC856BP

-V_CBO

-V_CEO

BC857BP, BC860BP

BC858BP, BC859BP

BC856BP

BC857BP, BC860BP

BC858BP, BC859BP

Collector Emitter Voltage

Emitter Base Voltage

Collector Current

-V_EBO

-I_C

100

Peak Collector Current

Power Dissipation

-I_CM

P_tot

T_j

200

Junction Temperature

Storage Temperature Range

150

T_stg

- 65 to + 150

Thermal Characteristics

Parameter

Symbol

R_θJA

Value

625

Unit

Thermal Resistance from Junction Ambient ¹⁾

¹⁾Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

1 / 5

Dated：07/04/2023 Rev: 02

12 3 4 5

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