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BC860B-4F PDF预览

BC860B-4F

更新时间: 2024-01-07 03:26:24
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描述
SOT23 PNP SILICON PLANAR GENERAL PURPOSE TRANSISTORS

BC860B-4F 数据手册

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SOT23 PNP SILICON PLANAR  
BC856  
BC858  
BC860  
BC857  
BC859  
GENERAL PURPOSE TRANSISTORS  
ISSUE 6 - APRIL 1997  
PARTMARKING DETAILS  
BC856A–3A BC858C–3L  
BC856B–Z3B BC859A–Z4A BC857  
BC857A–Z3E BC859B–4B BC858  
COMPLEMENTARY TYPES  
E
BC856  
BC846  
BC847  
BC848  
BC849  
BC850  
C
B
BC857B–3F  
BC857C–3G  
BC858A–3J  
BC858B–3K  
BC859C–Z4C BC859  
BC860A–Z4E BC860  
BC860B–4F  
SOT23  
BC860C–4GZ  
ABSOLUTE MAXIMUM RATINGS.  
UNIT  
V
PARAMETER  
Collector-Base Voltage  
Collector-Emitter Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Continuous Collector Current  
Peak Pulse Current  
SYMBOL  
BC856  
-80  
BC857  
-50  
BC858  
-30  
BC859  
-30  
BC860  
-50  
VCBO  
VCES  
VCEO  
VEBO  
IC  
-80  
-50  
-30  
-30  
-50  
V
-65  
-45  
-30  
-30  
-45  
V
-5  
V
-100  
-200  
-200  
-200  
330  
mA  
mA  
mA  
mA  
mW  
°C  
IEM  
Base Current  
IBM  
Base Current  
IEM  
Power Dissipation at Tamb=25°C  
Ptot  
Operating and Storage  
Temperature Range  
Tj:Tstg  
-55 to +150  
ELECTRICAL CHARACTERISTICS (at T  
= 25°C unless otherwise stated).  
amb  
UNIT CONDITIONS.  
BC856 BC857 BC858 BC859 BC860  
PARAMETER  
SYMBOL  
Collector Cut-Off Current ICBO  
Max  
Max  
nA  
VCB = -30V  
CB = -30V  
Tamb=150°C  
-15  
-4  
V
µA  
Collector-Emitter  
Saturation Voltage  
VCE(sat) Typ  
-75 -75  
-75  
Max. -300 -300 -300 -250 -250  
-75 -75  
mV IC=-10mA,  
IB=-0.5mA  
Typ  
Max.  
-250  
-650  
mV IC=-100mA,  
IB=-5mA  
Typ  
Max.  
-300  
-600  
mV IC=-10mA*  
Base-Emitter  
Saturation Voltage  
VBE(sat)  
-700  
mV IC=-10mA,  
IB=-0.5mA  
Typ  
-850  
mV IC=-100mA,  
IB=-5mA  
Typ  
Base-Emitter Voltage  
VBE  
-600 -600 -600 -580 -580 mV IC=-2mA  
Min  
Typ  
Max  
-650 -650 -650 -650 -650  
-750 -750 -750 -750 -750  
VCE=-5V  
-820  
mV IC=-10mA  
VCE=-5V  
Max  
* Collector-Emitter Saturation Voltage at IC = 10mA for the characteristics going through the  
operating point IC = 11mA, VCE = 1V at constant base current.  

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