5秒后页面跳转
BC858CW PDF预览

BC858CW

更新时间: 2024-01-07 20:22:33
品牌 Logo 应用领域
SECOS 晶体晶体管光电二极管IOT
页数 文件大小 规格书
5页 445K
描述
BC856AW

BC858CW 技术参数

是否Rohs认证: 符合生命周期:Transferred
包装说明:,Reach Compliance Code:unknown
风险等级:5.59Is Samacsys:N
最大集电极电流 (IC):0.1 A配置:Single
最小直流电流增益 (hFE):125JESD-609代码:e3
最高工作温度:150 °C极性/信道类型:PNP
最大功率耗散 (Abs):0.2 W子类别:Other Transistors
表面贴装:YES端子面层:Matte Tin (Sn)
标称过渡频率 (fT):100 MHzBase Number Matches:1

BC858CW 数据手册

 浏览型号BC858CW的Datasheet PDF文件第2页浏览型号BC858CW的Datasheet PDF文件第3页浏览型号BC858CW的Datasheet PDF文件第4页浏览型号BC858CW的Datasheet PDF文件第5页 
BC856AW, BW  
BC857AW, BW, CW  
BC858AW, BW, CW  
Elektronische Bauelemente  
RoHS Compliant Product  
FEATURES  
* Ideally suited for automatic insertion  
* For Switching and AF Amplifier Applications  
SOT-323  
* Operating Temp. : -55OC ~ +150OC  
Dim  
A
B
C
D
G
H
J
Min  
Max  
A
L
1.800 2.200  
1.150 1.350  
0.800 1.000  
0.300 0.400  
1.200 1.400  
0.000 0.100  
0.100 0.250  
0.350 0.500  
0.590 0.720  
2.000 2.400  
0.280 0.420  
C OLLE C TOR  
3
3
S
C
Top View  
B
1
2
1
V
G
BAS E  
3
K
L
2
1
E MITTE R  
2
H
J
D
K
S
V
All Dimension in mm  
MAXIMUM RATINGS* TA=25OC unless otherwise noted  
Symbol  
VCBO  
Parameter  
Value  
Units  
V
Collector-Base Voltage  
-80  
-50  
-30  
BC856  
BC857  
BC858  
VCEO  
Collector-Emitter Voltage  
V
-65  
-45  
-30  
-5  
BC856  
BC857  
BC858  
VEBO  
IC  
Emitter-Base Voltage  
V
A
Collector Current –Continuous  
-0.1  
PC*  
TJ  
Collector Dissipation  
Junction Temperature  
Storage Temperature  
150  
150  
mW  
O
C
O
Tstg  
-65~150  
C
*Package mounted on FR4 printed circuit board.  
DEVICE MARKING  
BC856AW=3A; BC856BW=3B;  
BC857AW=3E; BC857BW=3F; BC857CW=3G;  
BC858AW=3J; BC858BW=3K: BC858CW=3L  
http://www.SeCoSGmbH.com  
Any changing of specification will not be informed individual  
01-Jun-2002 Rev. A  
Page 1 of 4  

与BC858CW相关器件

型号 品牌 获取价格 描述 数据表
BC858CW-13 DIODES

获取价格

Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC
BC858CW-7 DIODES

获取价格

PNP SURFACE MOUNT SMALL SIGNAL TRANSISTOR
BC858CWE6327 INFINEON

获取价格

Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon
BC858CWE6327HTSA1 INFINEON

获取价格

Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon
BC858CWE6433 INFINEON

获取价格

Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon,
BC858CWG LGE

获取价格

PNP Silicon Epitaxial Planar Transistor
BC858CW-G COMCHIP

获取价格

Small Signal Transistor
BC858CW-HF COMCHIP

获取价格

Small Signal Bipolar Transistor,
BC858CWQ YANGJIE

获取价格

SOT-323
BC858CWT/R ETC

获取价格

TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 100MA I(C) | SOT-323