生命周期: | Transferred | 包装说明: | SMALL OUTLINE, R-PDSO-G3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.01 | 最大集电极电流 (IC): | 0.1 A |
集电极-发射极最大电压: | 30 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 420 | JESD-30 代码: | R-PDSO-G3 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | PNP | 功耗环境最大值: | 0.25 W |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | DUAL |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 250 MHz | VCEsat-Max: | 0.65 V |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BC858CWG | LGE |
获取价格 |
PNP Silicon Epitaxial Planar Transistor |
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BC858CW-G | COMCHIP |
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Small Signal Transistor |
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BC858CW-HF | COMCHIP |
获取价格 |
Small Signal Bipolar Transistor, |
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BC858CWQ | YANGJIE |
获取价格 |
SOT-323 |
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BC858CWT/R | ETC |
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TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 100MA I(C) | SOT-323 |
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BC858CWT1 | ONSEMI |
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General Purpose Transistors(PNP Silicon) |
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BC858CWT1 | LRC |
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General Purpose Transistors(PNP Silicon) |
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BC858CWT1 | MOTOROLA |
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CASE 419-02, STYLE 3 SOT-323/SC-70 |
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BC858CWT3 | MOTOROLA |
获取价格 |
100mA, 30V, PNP, Si, SMALL SIGNAL TRANSISTOR |
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BC858CW-TAPE-13 | NXP |
获取价格 |
TRANSISTOR 100 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signa |
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