BC856A

更新时间： 2024-09-24 22:54:03

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		开关放大器
页数	文件大小	规格书
5页	63K
描述
Switching and Amplifier Applications

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数据手册
替代型号

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BC856A 数据手册

BC856/857/858/859/860

Switching and Amplifier Applications

•

Suitable for automatic insertion in thick and thin-film circuits

Low Noise: BC859, BC860

Complement to BC846 ... BC850

SOT-23

1. Base 2. Emitter 3. Collector

PNP Epitaxial Silicon Transistor

Absolute Maximum Ratings ^{T =25°C unless otherwise noted}

Symbol

Parameter

Value

Units

Collector-Base Voltage

CBO

: BC856

: BC857/860

: BC858/859

-80

-50

-30

Collector-Emitter Voltage

CEO

: BC856

: BC857/860

: BC858/859

-65

-45

-30

Emitter-Base Voltage

Collector Current (DC)

-5

-100

EBO

°C

Collector Power Dissipation

Junction Temperature

Storage Temperature

310

150

-65 ~ 150

°C

STG

Electrical Characteristics ^{T =25°C unless otherwise noted}

Symbol

Parameter

Collector Cut-off Current

DC Current Gain

Test Condition

Min.

Typ.

Max.

-15

Units

= -30V, I =0

CBO

= -5V, I = -2mA

110

800

(sat)

(on)

Collector-Emitter Saturation Voltage

I = -10mA, I = -0.5mA

-90

-250

-300

-650

I = -100mA, I = -5mA

Base-Emitter Saturation Voltage

Base-Emitter On Voltage

I = -10mA, I = -0.5mA

-700

-900

I = -100mA, I = -5mA

= -5V, I = -2mA

-600

-660

-750

-800

= -5V, I = -10mA

Current Gain Bandwidth Product

= -5V, I = -10mA

150

MHz

f=100MHz

Output Capacitance

= -10V, I =0, f=1MHz

Noise Figure

: BC856/857/858

: BC859/860

: BC859

= -5V, I = -200µA

1.2

f=1KHz, R =2KΩ

= -5V, I = -200µA

: BC860

R =2KΩ, f=30~15000Hz

Rev. A2, August 2002

12 3 4 5

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BC856A 替代型号

型号	品牌	替代类型	描述	数据表
BC856BLT3G	ONSEMI	功能相似	General Purpose Transistors PNP Silicon
BC856BLT1G	ONSEMI	功能相似	General Purpose Transistors(PNP Silicon)
NSS30101LT1G	ONSEMI	功能相似	30 V, 2 A, Low VCE(sat) NPN Transistor

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