Datasheet > BC856A/E9

BC856A/E9

更新时间： 2024-11-17 23:34:51

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
5页	218K
描述
TRANSISTOR \| BJT \| PNP \| 65V V(BR)CEO \| 100MA I(C) \| SOT-23

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数据手册

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BC856A/E9 数据手册

BC856 thru BC859

Vishay Semiconductors

formerly General Semiconductor

Small Signal Transistors (PNP)

Mounting Pad Layout

0.031 (0.8)

TO-236AB (SOT-23)

0.035 (0.9)

.122 (3.1)

.110 (2.8)

0.079 (2.0)

.016 (0.4)

Top View

Pin Configuration

0.037 (0.95)

1 = Base, 2 = Emitter,

3 = Collector

0.037 (0.95)

Type

Marking

Type

Marking

BC856A

BC858A

Dimensions in inches

and (millimeters)

.037(0.95)

BC857A

BC859A

Features

• PNP Silicon Epitaxial Planar Transistors for switching

.102 (2.6)

.094 (2.4)

.016 (0.4) .016 (0.4)

and AF amplifier applications.

• Especially suited for automatic insertion in thick and

thin-film circuits.

Mechanical Data

• These transistors are subdivided into three groups

(A, B, and C) according to their current gain. The type

BC856 is available in groups A and B, however, the types

BC857, BC558 and BC859 can be supplied in all three

groups. The BC849 is a low noise type.

Case: SOT-23 Plastic Package

Weight: approx. 0.008g

Packaging Codes/Options:

E8/10K per 13” reel (8mm tape), 30K/box

E9/3K per 7” reel (8mm tape), 30K/box

• As complementary types, the NPN transistors

BC846...BC849 are recomended.

Maximum Ratings and Thermal Characteristics (T_A= 25°C unless otherwise noted)

Parameter

Symbol

Value

Unit

BC856

BC857

BC858, BC859

Collector-Base Voltage

–V

CBO

CES

BC856

BC857

BC858, BC859

Collector-Emitter Voltage (Base shorted)

Collector-Emitter Voltage (Base open)

–V

BC856

BC857

BC858, BC859

–V

CEO

Emitter-Base Voltage

Collector Current

100

°C/W

°C

EBO

–I

Peak Collector Current

Peak Base Current

Peak Emitter Current

–I

200

Power Dissipation at T = 50°C

310⁽¹⁾

450⁽¹⁾

320⁽¹⁾

150

tot

Thermal Resistance Junction to Ambient Air

θJA

Thermal Resistance Junction to Substrate Backside

Junction Temperature

θSB

Storage Temperature Range

–65 to +150

°C

Note: (1) Device on fiberglass substrate, see layout on third page.

Document Number 88169

09-May-02

www.vishay.com

12 3 4 5

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与BC856A/E9相关器件

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BC856A/T1	ETC	获取价格	TRANSISTOR
BC856A/T4	NXP	获取价格	TRANSISTOR 100 mA, 65 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, PLASTIC, SST3, SMD, 3
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BC856A_08	MCC	获取价格	PNP Small Signal Transistor310mW
BC856A_10	TSC	获取价格	250mW, PNP Small Signal Transistor
BC856A_11	MCC	获取价格	PNP Small Signal Transistor 310mW
BC856A_2	DIODES	获取价格	PNP SURFACE MOUNT SMALL SIGNAL TRANSISTOR
BC856A-3A	ETC	获取价格	SOT23 PNP SILICON PLANAR GENERAL PURPOSE TRANSISTORS
BC856A-7	DIODES	获取价格	PNP SURFACE MOUNT SMALL SIGNAL TRANSISTOR
BC856A-7-F	DIODES	获取价格	PNP SURFACE MOUNT SMALL SIGNAL TRANSISTOR IN SOT23