Datasheet > BC856A_10

BC856A_10

更新时间： 2024-11-18 08:49:55

品牌	Logo	应用领域
TSC		晶体晶体管
页数	文件大小	规格书
4页	260K
描述
250mW, PNP Small Signal Transistor

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中文翻译

获取价格

数据手册

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BC856A_10 数据手册

BC856A/B, BC857A/B/C, BC858A/B/C

250mW, PNP Small Signal Transistor

Small Signal Transistor

SOT-23

3 Collector

2 Emitter

1 Base

Features

Epitaxial planar die construction

Surface device type mounting

Moisture sensitivity level 1

Matte Tin(Sn) lead finish with Nickel(Ni) underplate

Pb free version and RoHS compliant

Green compound (Halogen free) with suffix "G" on

packing code and prefix "G" on date code

Unit (mm)

Unit (inch)

Dimensions

Min

2.80

1.20

0.30

1.80

2.25

0.90

Max

Min

Max

Mechanical Data

Case : SOT- 23 small outline plastic package

3.00 0.110 0.118

1.40 0.047 0.055

0.50 0.012 0.020

2.00 0.071 0.079

2.55 0.089 0.100

1.20 0.035 0.043

Terminal: Matte tin plated, lead free., solderable

per MIL-STD-202, Method 208 guaranteed

High temperature soldering guaranteed: 260°C/10s

Weight : 0.008gram (approximately)

Ordering Information

Suggested PAD Layout

Part No.

BC856A RF

Package

SOT-23

Packing

Marking

0.95

3K / 7" Reel

0.037

BC856B RF

BC857A RF

BC857B RF

BC857C RF

BC858A RF

BC858B RF

BC858C RF

BC856A RFG

BC856B RFG

BC857A RFG

BC857B RFG

BC857C RFG

BC858A RFG

BC858B RFG

BC858C RFG

2.0

0.079

0.9

0.035

0.8

0.031

Maximum Ratings and Electrical Characteristics

Rating at 25°C ambient temperature unless otherwise specified.

Maximum Ratings

Type Number

Symbol

Value

Units

Power Dissipation

P^D

250

-80

-50

-30

-65

-45

-30

-5

BC856

BC857

BC858

BC856

BC857

BC858

V_CBO

Collector-Base Voltage

Collector-Emitter Voltage

V_CEO

V_EBO

Emitter-Base Voltage

Collector Current

-0.1

Junction and Storage Temperature Range

T^J, TSTG

-55 to + 150

°C

Notes:1. Valid provided that electrodes are kept at ambient temperature

Version : E11

12 3 4

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