Datasheet > BC856ALT1/D

BC856ALT1/D

更新时间： 2024-11-17 23:34:51

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
8页	115K
描述
General Purpose Transistors

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中文翻译

获取价格

数据手册

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BC856ALT1/D 数据手册

BC856ALT1 Series

Preferred Devices

General Purpose

Transistors

PNP Silicon

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

http://onsemi.com

Rating

Symbol

Value

Unit

Collector-Emitter Voltage

BC856

BC857

–65

–45

–30

CEO

CBO

EBO

COLLECTOR

BC858, BC859

Collector-Base Voltage

BC856

BC857

–80

–50

–30

BASE

BC858, BC859

Emitter–Base Voltage

–5.0

Collector Current – Continuous

THERMAL CHARACTERISTICS

Characteristic

–100

mAdc

EMITTER

Symbol

Max

Unit

MARKING DIAGRAM

Total Device Dissipation FR–5 Board,

(Note 1.) T = 25°C

Derate above 25°C

225

1.8

mW/°C

Thermal Resistance,

Junction to Ambient

556

°C/W

SOT–23

CASE 318

STYLE 6

Total Device Dissipation Alumina

Substrate, (Note 2.) T = 25°C

Derate above 25°C

xx = Device Code

300

2.4

mW/°C

= (See Table Below)

Thermal Resistance,

Junction to Ambient

417

°C/W

°C

ORDERING INFORMATION

Junction and Storage Temperature

T , T

–55 to

+150

stg

Device

Package Mark

Shipping

BC856ALT1 SOT–23

BC856BLT1 SOT–23

BC857ALT1 SOT–23

BC857BLT1 SOT–23

BC858ALT1 SOT–23

BC858BLT1 SOT–23

BC858CLT1 SOT–23

BC859BLT1 SOT–23

BC859CLT1 SOT–23

3000/Tape & Reel

1. FR–5 = 1.0 x 0.75 x 0.062 in

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

Preferred devices are recommended choices for future use

and best overall value.

Semiconductor Components Industries, LLC, 2001

Publication Order Number:

January, 2001 – Rev. 2

BC856ALT1/D

12 3 4 5 6 7 8

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BC856ALT3	ONSEMI	获取价格	General Purpose Transistors(PNP Silicon)
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