Datasheet > BC856A_2

BC856A_2

更新时间： 2024-11-18 12:50:03

品牌	Logo	应用领域
美台 - DIODES		晶体晶体管
页数	文件大小	规格书
4页	119K
描述
PNP SURFACE MOUNT SMALL SIGNAL TRANSISTOR

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

BC856A_2 数据手册

BC856A - BC858C

PNP SURFACE MOUNT SMALL SIGNAL TRANSISTOR

Please click here to visit our online spice models database.

Features

•

Ideally Suited for Automatic Insertion

Complementary NPN Types Available (BC846-BC848)

For Switching and AF Amplifier Applications

SOT-23

Dim

Min

0.37

1.20

2.30

0.89

0.45

1.78

2.80

0.013

0.903

0.45

0.085

0°

Max

0.51

1.40

2.50

1.03

0.60

2.05

3.00

0.10

1.10

0.61

0.180

8°

Qualified to AEC-Q101 Standards for High Reliability

Lead, Halogen and Antimony Free, RoHS Compliant

"Green" Device (Notes 3 and 4)

TOP VIEW

Mechanical Data

•

Case: SOT-23

Case Material: Molded Plastic. UL Flammability

Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020C

Terminals: Solderable per MIL-STD-202, Method 208

Lead Free Plating (Matte Tin Finish annealed over

Alloy 42 leadframe).

Pin Connections: See Diagram

Marking Codes: See Table Below & Diagram on Page 4

Ordering & Date Code Information: See Page 4

•

Weight: 0.008 grams (approximate)

All Dimensions in mm

Marking Code (Note 2)

Type

Marking

3A, K3A

Type

Marking

3G, K3G

BC856A

BC856B

BC857A

BC857B

BC857C

BC858A

BC858B

BC858C

3B, K3B

3J, K3J, K3A, K3V

3K, K3K, K3B, K3W

3L, K3L, K3G

3E, K3V, K3A

3F, K3W, K3B

Maximum Ratings @T_A= 25°C unless otherwise specified

Characteristic

Symbol

Value

Unit

Collector-Base Voltage

Collector-Emitter Voltage

BC856

BC857

BC858

-80

-50

-30

V_CBO

BC856

BC857

BC858

-65

-45

-30

V_CEO

Emitter-Base Voltage

V_EBO

I_C

-5.0

-100

°C/W

°C

Collector Current

Peak Collector Current

I_CM

-200

Peak Emitter Current

I_EM

-200

Power Dissipation (Note 1)

Thermal Resistance, Junction to Ambient (Note 1)

Operating and Storage Temperature Range

P_d

300

417

R_θJA

T_j, T_STG

-65 to +150

Notes:

1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001,

which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.

2. Current gain subgroup “C” is not available for BC856.

3. No purposefully added lead. Halogen and Antimony Free.

4. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date Code

V9 are built with Non-Green Molding Compound and may contain Halogens or Sb₂O₃Fire Retardants.

DS11207 Rev. 19 - 2

1 of 4

BC856A-BC858C

www.diodes.com

12 3 4

中文翻译

下载PDF

与BC856A_2相关器件

型号	品牌	获取价格	描述	数据表
BC856A-3A	ETC	获取价格	SOT23 PNP SILICON PLANAR GENERAL PURPOSE TRANSISTORS
BC856A-7	DIODES	获取价格	PNP SURFACE MOUNT SMALL SIGNAL TRANSISTOR
BC856A-7-F	DIODES	获取价格	PNP SURFACE MOUNT SMALL SIGNAL TRANSISTOR IN SOT23
BC856A-7-F	TAITRON	获取价格	PNP SURFACE MOUNT SMALL SIGNAL TRANSISTOR
BC856-A-AE3-R	UTC	获取价格	SWITCHING AND AMPLIFIER APPLICATIONS
BC856A-AU	PANJIT	获取价格	SOT-23
BC856AD87Z	FAIRCHILD	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, PNP, Silicon
BC856AE6327	INFINEON	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, PNP, Silicon
BC856AE6433	INFINEON	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, PNP, Silicon
BC856AF	NXP	获取价格	PNP general purpose transistors

与BC856A_2相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

17
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

12
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

42
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

37

产品中心

服务支持

精选活动

关于我们

帮助中心

BC856A_2

BC856A_2 数据手册

与BC856A_2相关器件

与BC856A_2相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

BC856A_2

BC856A_2 数据手册

与BC856A_2相关器件

与BC856A_2相关文章

您还可以找

您在本页遇到什么问题？