Datasheet > BC856A_2

BC856A_2

更新时间： 2024-01-01 22:39:13

品牌	Logo	应用领域
美台 - DIODES		晶体晶体管
页数	文件大小	规格书
4页	119K
描述
PNP SURFACE MOUNT SMALL SIGNAL TRANSISTOR

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中文翻译

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数据手册

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BC856A_2 数据手册

Electrical Characteristics @T_A= 25°C unless otherwise specified

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

I_C= 10μA, I_B= 0

Collector-Base Breakdown Voltage (Note 5)

BC856

BC857

BC858

-80

-50

-30

—

V_(BR)CBO

Collector-Emitter Breakdown Voltage (Note 5)

BC856

BC857

BC858

-65

-45

-30

—

V_(BR)CEO

V_(BR)EBO

I_C= 10mA, I_B= 0

Emitter-Base Breakdown Voltage (Note 5)

H-Parameters

-5

—

I_E= 1μA, I_C= 0

—

kΩ

µS

—

Small Signal Current Gain

Current Gain Group A

h_fe

h_ie

h_oe

h_re

—

200

330

600

2.7

4.5

—

Input Impedance

Current Gain Group A

V_CE= -5.0V, I_C= -2.0mA,

f = 1.0kHz

8.7

Output Admittance

Current Gain Group A

Reverse Voltage Transfer Ratio

Current Gain Group A

1.5x10^-4

2x10^-4

3x10^-4

—

DC Current Gain (Note 5)

Current Gain Group A

125

220

420

180

290

520

250

475

800

h_FE

—

V_CE= -5.0V, I_C= -2.0mA

-75

-250

-300

-650

I_C= -10mA, I_B= -0.5mA

I_C= -100mA, I_B= -5.0mA

Collector-Emitter Saturation Voltage (Note 5)

Base-Emitter Saturation Voltage (Note 5)

V_CE(SAT)

V_BE(SAT)

V_BE(ON)

—

-700

-850

I_C= -10mA, I_B= -0.5mA

I_C= -100mA, I_B= -5.0mA

—

-600

—

-650

—

-750

-820

V_CE= -5.0V, I_C= -2.0mA

V_CE= -5.0V, I_C= -10mA

Base-Emitter Voltage (Note 5)

Collector-Cutoff Current (Note 5)

BC856

BC857

BC858

I_CES

I_CBO

—

-15

-4.0

µA

V_CE= -80V

V_CE= -50V

V_CE= -30V

V_CB= -30V

V_CB= -30V, T_A= 150°C

V_CE= -5.0V, I_C= -10mA,

f = 100MHz

Gain Bandwidth Product

Collector-Base Capacitance

Noise Figure

f_T

100

—

200

—

MHz

C_CBO

V_CB= -10V, f = 1.0MHz

V_CE= -5.0V, I_C= 200µA,

R_S= 2kΩ, f = 1kHz, Δf = 200Hz

—

Notes:

5. Short duration pulse test used to minimize self-heating effect.

DS11207 Rev. 19 - 2

2 of 4

www.diodes.com

BC856A-BC858C

123 4

中文翻译

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与BC856A_2相关器件

型号	品牌	获取价格	描述	数据表
BC856A-3A	ETC	获取价格	SOT23 PNP SILICON PLANAR GENERAL PURPOSE TRANSISTORS
BC856A-7	DIODES	获取价格	PNP SURFACE MOUNT SMALL SIGNAL TRANSISTOR
BC856A-7-F	DIODES	获取价格	PNP SURFACE MOUNT SMALL SIGNAL TRANSISTOR IN SOT23
BC856A-7-F	TAITRON	获取价格	PNP SURFACE MOUNT SMALL SIGNAL TRANSISTOR
BC856-A-AE3-R	UTC	获取价格	SWITCHING AND AMPLIFIER APPLICATIONS
BC856A-AU	PANJIT	获取价格	SOT-23
BC856AD87Z	FAIRCHILD	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, PNP, Silicon
BC856AE6327	INFINEON	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, PNP, Silicon
BC856AE6433	INFINEON	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, PNP, Silicon
BC856AF	NXP	获取价格	PNP general purpose transistors

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