BC850ALT1

更新时间： 2024-01-26 01:28:56

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		/
页数	文件大小	规格书
6页	223K
描述
CASE 318-08, STYLE 6 SOT-23 (TO-236AB)

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BC850ALT1 数据手册

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by BC846ALT1/D

SEMICONDUCTOR TECHNICAL DATA

NPN Silicon

COLLECTOR

BASE

BC846, BC847 and BC848 are

Motorola Preferred Devices

EMITTER

MAXIMUM RATINGS

BC847 BC848

BC850 BC849

Rating

Symbol BC846

Unit

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

CEO

CBO

EBO

6.0

100

6.0

100

5.0

100

Collector Current — Continuous

THERMAL CHARACTERISTICS

Characteristic

mAdc

CASE 318–08, STYLE 6

SOT–23 (TO–236AB)

Symbol

Max

Unit

Total Device Dissipation FR–5 Board, (1)

= 25°C

Derate above 25°C

225

1.8

mW/°C

Thermal Resistance, Junction to Ambient

Total Device Dissipation

556

°C/W

Alumina Substrate, (2) T = 25°C

300

2.4

mW/°C

Derate above 25°C

Thermal Resistance, Junction to Ambient

Junction and Storage Temperature

DEVICE MARKING

417

°C/W

°C

T , T

J stg

–55 to +150

BC846ALT1 = 1A; BC846BLT1 = 1B; BC847ALT1 = 1E; BC847BLT1 = 1F;

BC847CLT1 = 1G; BC848ALT1 = 1J; BC848BLT1 = 1K; BC848CLT1 = 1L

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

OFF CHARACTERISTICS

Symbol

Min

Typ

Max

Unit

Collector–Emitter Breakdown Voltage BC846A,B

—

(BR)CEO

(I = 10 mA)

BC847A,B,C, BC850A,B,C

BC848A,B,C, BC849A,B,C

Collector–Emitter Breakdown Voltage BC846A,B

—

(BR)CES

(BR)CBO

(BR)EBO

(I = 10 µA, V

C EB

= 0)

BC847A,B,C, BC850A,B,C

BC848A,B,C, BC849A,B,C

Collector–Base Breakdown Voltage

BC846A,B

—

(I = 10 A)

BC847A,B,C, BC850A,B,C

BC848A,B,C, BC849A,B,C

Emitter–Base Breakdown Voltage

BC846A,B

6.0

5.0

—

(I = 1.0 A)

BC847A,B,C

BC848A,B,C, BC849A,B,C, BC850A,B,C

Collector Cutoff Current (V

= 30 V)

= 30 V, T = 150°C)

—

5.0

µA

CBO

1. FR–5 = 1.0 x 0.75 x 0.062 in

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

Thermal Clad is a trademark of the Bergquist Company.

Preferred devices are Motorola recommended choices for future use and best overall value.

M_Mot_oo_tor_ro_ol_la_a,S_Inm_{c. 1}a₉ll₉–₆Signal Transistors, FETs and Diodes Device Data

12 3 4 5 6

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