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BC847BW PDF预览

BC847BW

更新时间: 2024-10-27 22:53:59
品牌 Logo 应用领域
恩智浦 - NXP 晶体小信号双极晶体管
页数 文件大小 规格书
8页 54K
描述
NPN general purpose transistors

BC847BW 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:SC-70
包装说明:SMALL OUTLINE, R-PDSO-G3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:2.83最大集电极电流 (IC):0.1 A
基于收集器的最大容量:3 pF集电极-发射极最大电压:45 V
配置:SINGLE最小直流电流增益 (hFE):200
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:NPN最大功率耗散 (Abs):0.2 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:30晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):100 MHz
VCEsat-Max:0.6 VBase Number Matches:1

BC847BW 数据手册

 浏览型号BC847BW的Datasheet PDF文件第1页浏览型号BC847BW的Datasheet PDF文件第2页浏览型号BC847BW的Datasheet PDF文件第4页浏览型号BC847BW的Datasheet PDF文件第5页浏览型号BC847BW的Datasheet PDF文件第6页浏览型号BC847BW的Datasheet PDF文件第7页 
Philips Semiconductors  
Product specification  
NPN general purpose transistors  
BC846W; BC847W  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
CONDITIONS  
note 1  
VALUE  
UNIT  
Rth j-a  
thermal resistance from junction to ambient  
625  
K/W  
Note  
1. Transistor mounted on an FR4 printed-circuit board.  
CHARACTERISTICS  
Tamb = 25 °C unless otherwise specified.  
SYMBOL  
ICBO  
PARAMETER  
CONDITIONS  
IE = 0; VCB = 30 V  
MIN. TYP. MAX. UNIT  
collector cut-off current  
15  
5
nA  
µA  
nA  
IE = 0; VCB = 30 V; Tj = 150 °C  
IEBO  
hFE  
emitter cut-off current  
DC current gain  
BC846W  
IC = 0; VEB = 5 V  
100  
IC = 2 mA; VCE = 5 V;  
see Figs 2, 3 and 4  
110  
110  
110  
200  
420  
450  
800  
220  
450  
800  
250  
600  
BC847W  
BC846AW; BC847AW  
BC846BW; BC847BW  
BC847CW  
VCEsat  
VBEsat  
VBE  
collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA  
IC = 100 mA; IB = 5 mA; note 1  
mV  
mV  
mV  
mV  
mV  
mV  
pF  
base-emitter saturation voltage  
IC = 10 mA; IB = 0.5 mA  
IC = 100 mA; IB = 5 mA  
IC = 2 mA; VCE = 5 V  
700  
900  
base-emitter voltage  
580  
700  
770  
3
IC = 10 mA; VCE = 5 V  
Cc  
fT  
collector capacitance  
transition frequency  
noise figure  
IE = ie = 0; VCB = 10 V; f = 1 MHz  
IC = 10 mA; VCE = 5 V; f = 100 MHz 100  
MHz  
dB  
F
IC = 200 µA; VCE = 5 V; RS = 2 k;  
10  
f = 1 kHz; B = 200 Hz  
Note  
1. Pulse test: tp 300 µs; δ ≤ 0.02.  
1999 Apr 23  
3

BC847BW 替代型号

型号 品牌 替代类型 描述 数据表
BC847CLT1G ONSEMI

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General Purpose Transistors(NPN Silicon)
BC847ALT1G ONSEMI

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General Purpose Transistors(NPN Silicon)

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