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BC847BW-13 PDF预览

BC847BW-13

更新时间: 2024-02-17 08:18:03
品牌 Logo 应用领域
美台 - DIODES 开关光电二极管晶体管
页数 文件大小 规格书
3页 116K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC PACKAGE-3

BC847BW-13 技术参数

是否Rohs认证:符合生命周期:Active
包装说明:SMALL OUTLINE, R-PDSO-G3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.55
Is Samacsys:N其他特性:HIGH RELIABILITY
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:45 V
配置:SINGLE最小直流电流增益 (hFE):200
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN最大功率耗散 (Abs):0.2 W
参考标准:AEC-Q101子类别:Other Transistors
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):300 MHz
Base Number Matches:1

BC847BW-13 数据手册

 浏览型号BC847BW-13的Datasheet PDF文件第2页浏览型号BC847BW-13的Datasheet PDF文件第3页 
BC846AW - BC848CW  
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR  
Features  
A
Ideally Suited for Automatic Insertion  
SOT-323  
Complementary PNP Types Available (BC856W-BC858W)  
For Switching and AF Amplifier Applications  
Lead Free/RoHS Compliant (Note 3)  
C
Dim  
A
B
C
D
F
Min  
0.25  
1.15  
2.00  
Max  
0.40  
1.35  
2.20  
C
B
"Green" Device (Note 4 and 5)  
B
E
0.65 Nominal  
G
H
Mechanical Data  
0.30  
1.20  
1.80  
0.0  
0.40  
1.40  
2.20  
0.10  
1.00  
0.40  
0.18  
8°  
G
H
J
Case: SOT-323  
Case Material: Molded Plastic, "Green" Molding Compound,  
Note 5. UL Flammability Classification Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020C  
Terminals: Solderable per MIL-STD-202, Method 208  
Lead Free Plating (Matte Tin Finish annealed over Alloy 42  
leadframe).  
Pin Connections: See Diagram  
Marking Codes (See Table Below & Diagram on Page 3)  
Ordering & Date Code Information: See Page 3  
Weight: 0.006 grams (approximate)  
K
J
M
K
L
0.90  
0.25  
0.10  
0°  
L
D
F
M
α
All Dimensions in mm  
Marking Code (Note 2)  
Type  
Marking  
K1Q  
K1R  
K1E, K1Q  
K1F, K1R  
Type  
Marking  
K1M  
K1J, K1E, K1Q  
K1K, K1F, K1R  
K1L, K1M  
BC846AW  
BC846BW  
BC847AW  
BC847BW  
BC847CW  
BC848AW  
BC848BW  
BC848CW  
Maximum Ratings @TA = 25°C unless otherwise specified  
Characteristic  
Symbol  
Value  
Unit  
80  
50  
30  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
BC846  
BC847  
BC848  
V
VCBO  
65  
45  
30  
BC846  
BC847  
BC848  
V
V
VCEO  
6.0  
5.0  
BC846, BC847  
BC848  
VEBO  
Collector Current  
100  
200  
200  
200  
625  
mA  
mA  
mA  
mW  
°C/W  
IC  
Peak Collector Current  
Peak Emitter Current  
Power Dissipation (Note 1)  
ICM  
IEM  
Pd  
Thermal Resistance, Junction to Ambient (Note 1)  
Rθ  
JA  
Operating and Storage Temperature Range  
-65 to +150  
°C  
Tj, TSTG  
Notes:  
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which  
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.  
2. Current gain subgroup “C” is not available for BC846W.  
3. No purposefully added lead.  
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.  
5. Product manufactured with Date Code 0627 (week 27, 2006) and newer are built with Green Molding Compound. Product manufactured prior to Date  
Code 0627 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.  
BC846AW - BC848CW  
DS30250 Rev. 9 - 2  
1 of 3  
© Diodes Incorporated  
www.diodes.com  

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