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BC847BWT1 PDF预览

BC847BWT1

更新时间: 2024-01-03 08:39:06
品牌 Logo 应用领域
乐山 - LRC 晶体晶体管
页数 文件大小 规格书
4页 183K
描述
General Purpose Transistors(NPN Silicon)

BC847BWT1 技术参数

是否无铅:不含铅生命周期:Active
零件包装代码:SC-70包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.95
Factory Lead Time:4 weeks风险等级:0.62
Samacsys Confidence:3Samacsys Status:Released
2D Presentation:https://componentsearchengine.com/2D/0T/224479.1.1.pngSchematic Symbol:https://componentsearchengine.com/symbol.php?partID=224479
PCB Footprint:https://componentsearchengine.com/footprint.php?partID=2244793D View:https://componentsearchengine.com/viewer/3D.php?partID=224479
Samacsys PartID:224479Samacsys Image:https://componentsearchengine.com/Images/9/BC847BWT1G.jpg
Samacsys Thumbnail Image:https://componentsearchengine.com/Thumbnails/1/BC847BWT1G.jpgSamacsys Pin Count:3
Samacsys Part Category:TransistorSamacsys Package Category:SOT23 (3-Pin)
Samacsys Footprint Name:SC-70 (SOT-323) CASE419-04Samacsys Released Date:2016-03-10 11:00:56
Is Samacsys:N最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:45 V配置:SINGLE
最小直流电流增益 (hFE):200JESD-30 代码:R-PDSO-G3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
最高工作温度:150 °C最低工作温度:-55 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:NPN认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):100 MHzBase Number Matches:1

BC847BWT1 数据手册

 浏览型号BC847BWT1的Datasheet PDF文件第2页浏览型号BC847BWT1的Datasheet PDF文件第3页浏览型号BC847BWT1的Datasheet PDF文件第4页 
LESHAN RADIO COMPANY, LTD.  
GeneralPurposeTransistors  
NPN Silicon  
BC846AWT1,BWT1  
BC847AWT1,BWT1  
CWT1  
These transistors are designed for general purpose amplifier  
applications. They are housed in the SOT–323/SC–70 which is  
designed for low power surface mount applications.  
3
COLLECTOR  
BC848AWT1,BWT1  
CWT1  
1
BASE  
2
EMITTER  
MAXIMUM RATINGS  
3
Rating  
Symbol  
V CEO  
V CBO  
V EBO  
I C  
BC846  
65  
BC847  
45  
BC848  
Unit  
V
1
Collector–Emitter Voltage  
Collector–Base Voltage  
Emitter–Base Voltage  
Collector Current — Continuous  
30  
30  
2
80  
50  
V
CASE 419–02, STYLE 3  
SOT–323 /SC–70  
6.0  
6.0  
5.0  
100  
V
100  
100  
mAdc  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
Total Device Dissipation FR– 5 Board, (1)  
TA = 25°C  
P D  
150  
mW  
Thermal Resistance, Junction to Ambient  
Total Device Dissipation  
R θJA  
P D  
833  
2.4  
°C/W  
mW/°C  
°C  
Junction and Storage Temperature  
T J , T stg  
–55 to +150  
DEVICE MARKING  
BC846AWT1 = 1A; BC846BWT1 = 1B; BC847AWT1 = 1E; BC847BWT1 = 1F;  
BC847CWT1 = 1G; BC848AWT1 = 1J; BC848BWT1 = 1K; BC848CWT1 = 1L  
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)  
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
OFF CHARACTERISTICS  
Collector–Emitter Breakdown Voltage  
(IC = 10 mA)  
BC846 Series  
BC847 Series  
BC848 Series  
BC846 Series  
BC847 Series  
BC848 Series  
BC846 Series  
BC847 Series  
BC848 Series  
BC846 Series  
BC847 Series,  
BC848 Series  
65  
45  
30  
80  
50  
30  
80  
50  
30  
6.0  
6.0  
5.0  
15  
5.0  
V (BR)CEO  
V (BR)CES  
V (BR)CBO  
v
v
v
v
Collector–Emitter Breakdown Voltage  
(IC = 10 µA, VEB = 0)  
Collector–Base Breakdown Voltage  
(IC = 10 µA)  
Emitter–Base Breakdown Voltage  
(IE = 1.0 µA)  
V (BR)EBO  
Collector Cutoff Current (VCB = 30 V)  
nA  
I CBO  
(VCB = 30 V, TA = 150°C)  
µA  
1.FR–5=1.0 x 0.75 x 0.062in  
K4–1/4  

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