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BC847BW PDF预览

BC847BW

更新时间: 2024-10-27 22:53:59
品牌 Logo 应用领域
恩智浦 - NXP 晶体小信号双极晶体管
页数 文件大小 规格书
8页 54K
描述
NPN general purpose transistors

BC847BW 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:SC-70
包装说明:SMALL OUTLINE, R-PDSO-G3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:2.83最大集电极电流 (IC):0.1 A
基于收集器的最大容量:3 pF集电极-发射极最大电压:45 V
配置:SINGLE最小直流电流增益 (hFE):200
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:NPN最大功率耗散 (Abs):0.2 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:30晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):100 MHz
VCEsat-Max:0.6 VBase Number Matches:1

BC847BW 数据手册

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Philips Semiconductors  
Product specification  
NPN general purpose transistors  
BC846W; BC847W  
FEATURES  
PINNING  
PIN  
Low current (max. 100 mA)  
Low voltage (max. 65 V).  
DESCRIPTION  
1
2
3
base  
emitter  
collector  
APPLICATIONS  
General purpose switching and amplification.  
DESCRIPTION  
NPN transistor in a SC70; SOT323 plastic package.  
PNP complements: BC856W and BC857W.  
3
handbook, halfpage  
3
MARKING  
1
TYPE  
NUMBER  
MARKING  
CODE(1)  
TYPE  
NUMBER  
MARKING  
CODE(1)  
2
1
2
BC846W  
1D  
1A  
1B  
1H  
BC847AW  
BC847BW  
BC847CW  
1E  
1F  
1G  
Top view  
BC846AW  
BC846BW  
BC847W  
MAM062  
Note  
Fig.1 Simplified outline (SC70; SOT323)  
and symbol.  
1.  
= - : Made in Hong Kong.  
= t : Made in Malaysia.  
LIMITING VALUES  
In accordance with the Absolute Maximum Rating System (IEC 134).  
SYMBOL  
PARAMETER  
collector-base voltage  
CONDITIONS  
open emitter  
MIN.  
MAX.  
UNIT  
VCBO  
BC846W  
80  
V
V
BC847W  
50  
VCEO  
collector-emitter voltage  
BC846W  
open base  
65  
V
V
V
BC847W  
45  
VEBO  
IC  
emitter-base voltage  
collector current (DC)  
peak collector current  
peak base current  
total power dissipation  
storage temperature  
junction temperature  
operating ambient temperature  
open collector  
5
100  
200  
200  
200  
+150  
150  
+150  
mA  
mA  
mA  
mW  
°C  
ICM  
IBM  
Ptot  
Tstg  
Tj  
Tamb 25 °C; note 1  
65  
°C  
Tamb  
65  
°C  
Note  
1. Transistor mounted on an FR4 printed-circuit board.  
1999 Apr 23  
2

BC847BW 替代型号

型号 品牌 替代类型 描述 数据表
BC847CLT1G ONSEMI

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General Purpose Transistors(NPN Silicon)
BC847ALT1G ONSEMI

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General Purpose Transistors(NPN Silicon)

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