Datasheet > BC847BT

BC847BT

更新时间： 2024-11-16 17:00:23

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
6页	478K
描述
45V,0.1A,General Purpose NPN Bipolar Transistor

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中文翻译

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数据手册

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BC847BT 数据手册

NPN Small Signal Surface Mount Transistor

BC846T-BC848T

Features



High current gain

Excellent h_FElinearity

Low noise between 30Hz and 15kHz

Mechanical Data



Case: SOT-523

Molding compound: UL flammability classification rating 94V-0

Terminal s: Tin-plated; solderability per MIL-STD-202, Method 208

SOT-523

Ordering Information

Part Number

BC846A/B/T

Package

SOT-523

Shipping Quantity

3000 pcs / Tape & Reel

Marking Code

1A/1B

BC847A/B/CT

BC848A/B/C/T

1E/1F/1G

1J/1K/1L

Maximum Ratings (@ T_A= 25℃ unless otherwise specified)

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Symbol

V_CBO

V_CEO

V_EBO

I_C

BC846

BC847

BC848

Unit

Collector Current (Continuous)

Collector Current (Peak)

100

200

I_CM

Thermal Characteristics

Parameter

Power Dissipation (Collector) ^{( Note 1 )}

Thermal Resistance Junction-to-Air ^*1

Thermal Resistance Junction-to-Case ^*1

Thermal Resistance Junction-to-Lead ^*1

Operating Junction Temperature

Symbol

P_D

Value

265

Unit

T_{A =}25°C

°C/W

°C

R_θJA

R_θJC

R_θJL

T_J

306

152

-55 ~ +150

Storage Temperature Range

T_STG

°C

STM0453A: October 2022 [2.2]

www.gmesemi.com

12 3 4 5 6

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BC847BT117	ROHM	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon,
BC847BT-13	DIODES	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, ULTRA S
BC847BT216	ROHM	获取价格	Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon,
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