生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PDSO-G3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.55 | 最大集电极电流 (IC): | 0.1 A |
集电极-发射极最大电压: | 45 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 200 | JESD-30 代码: | R-PDSO-G3 |
元件数量: | 1 | 端子数量: | 3 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | NPN |
参考标准: | IEC-60134 | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | DUAL |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 100 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BC847BT/R | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 45V V(BR)CEO | 100MA I(C) | TO-236AA | |
BC847BT116 | ROHM |
获取价格 |
NPN General Purpose Transistor | |
BC847BT117 | ROHM |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, | |
BC847BT-13 | DIODES |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, ULTRA S | |
BC847BT216 | ROHM |
获取价格 |
Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, | |
BC847BT-7 | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 45V V(BR)CEO | 100MA I(C) | SOT-523 | |
BC847BT-7-F | NXP |
获取价格 |
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR | |
BC847BT-7-F | DIODES |
获取价格 |
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR | |
BC847BTA | DIODES |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon | |
BC847B-TAPE-13 | NXP |
获取价格 |
TRANSISTOR 100 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signa |