BC846BDW1T1D

更新时间： 2024-09-15 08:49:43

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管
页数	文件大小	规格书
10页	122K
描述
Dual General Purpose Transistors

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BC846BDW1T1D 数据手册

BC846BDW1T1G,

BC847BDW1T1G,

BC848CDW1T1G

Dual General Purpose

Transistors

http://onsemi.com

NPN Duals

(3)

(2)

(1)

These transistors are designed for general purpose amplifier

applications. They are housed in the SOT−363/SC−88 which is

designed for low power surface mount applications.

Features

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

(4)

(5)

(6)

Compliant

MAXIMUM RATINGS

MARKING

DIAGRAM

Rating

Symbol BC846 BC847 BC848 Unit

Collector−Emitter Voltage

Collector−Base Voltage

Emitter−Base Voltage

CEO

CBO

1x MG

SOT−363

CASE 419B

STYLE 1

6.0

100

6.0

100

5.0

100

EBO

Collector Current −

Continuous

mAdc

1x = Specific Device Code

= B, F, G, L

M = Date Code

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

= Pb−Free Package

(Note: Microdot may be in either location)

THERMAL CHARACTERISTICS

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 6 of this data sheet.

Characteristic

Symbol

Max

Unit

Total Device Dissipation

Per Device

380

250

FR−5 Board (Note 1)

T = 25°C

Derate Above 25°C

3.0

mW/°C

°C/W

Thermal Resistance,

Junction to Ambient

328

Junction and Storage

Temperature Range

T , T

−55 to +150

°C

stg

1. FR−5 = 1.0 x 0.75 x 0.062 in

Semiconductor Components Industries, LLC, 2010

Publication Order Number:

July, 2010 − Rev. 7

BC846BDW1T1/D

12 3 4 5 6 7...10

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