Datasheet > BC846BLT1

BC846BLT1

更新时间： 2024-09-14 22:48:15

品牌	Logo	应用领域
乐山 - LRC		晶体晶体管
页数	文件大小	规格书
4页	181K
描述
General Purpose Transistors(NPN Silicon)

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

BC846BLT1 数据手册

LESHAN RADIO COMPANY,LTD.

General Purpose Transistors

NPN Silicon

BC846ALT1,BLT1

BC847ALT1,BLT1

CLT1 thru

MAXIMUM RATINGS

BC847

BC850

BC848

BC849

Rating

Symbol

V _CEO

V _CBO

V _EBO

I _C

BC846

Unit

BC850BLT1,CLT1

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

6.0

5.0

100

200

Collector Current — Continuous

Collector Current(Peak value)

Emitter Current(Peak value)

Base Current(Peak value)

100

200

100

mAdc

I _CM

200

I _EM

200

I _BM

200

SOLDERING CHARACTERISTICS

CASE 318–08, STYLE 6

SOT–23 (TO–236AB)

Characteristic

Symbol

265

Unit

°C

Solder Heat Resistance

Solderability

240 to 265

°C

THERMAL CHARACTERISTICS

Characteristic

COLLECTOR

Symbol

Max

Unit

Total Device Dissipation FR– 5 Board, (1)

T_A= 25°C

P_D

BASE

225

1.8

Derate above 25°C

mW/°C

°C/W

Thermal Resistance, Junction to Ambient

Total Device Dissipation

R_θJA

P_D

556

EMITTER

Alumina Substrate, (2) T_A= 25°C

Derate above 25°C

300

2.4

mW/°C

°C/W

°C

Thermal Resistance, Junction to Ambient

Junction and Storage Temperature

R_θJA

417

T_J, T_stg

–55 to +150

DEVICE MARKING

BC846ALT1 = 1A; BC846BLT1 = 1B; BC847ALT1 = 1E; BC847BLT1 = 1F;

BC847CLT1 = 1G; BC848ALT1 = 1J; BC848BLT1 = 1K; BC848CLT1 = 1L

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage

(I_C= 10 mA)

BC846A,B

6.0

5.0

—

BC847A,B,C, BC850B,C

BC848A,B,C, BC849B,C

BC846A,B

V_(BR)CEO

V_(BR)CES

V_(BR)CBO

Collector–Emitter Breakdown Voltage

(I_C= 10 µA, V_EB= 0)

BC847A,B,C, BC850B,C

BC848A,B,C, BC849B,C

Collector–Base Breakdown Voltage BC846A,B

(I_C= 10 µA)

BC847A,B,C, BC850B,C

BC848A,B,C, BC849B,C

BC846A,B BC847A,B,C

Emitter–Base Breakdown Voltage

(I_E= 1.0 µA)

BC848A,B,C, BC849B,C,

BC850B,C

V_(BR)EBO

Collector Cutoff Current

(V_CB= 30 V)

(V_CB= 30 V, T_A= 150°C)

—

I_CBO

—

5.0

µA

1. FR–5 = 1.0 x 0.75 x 0.062 in

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

M3–1/4

12 3 4

中文翻译

下载PDF

与BC846BLT1相关器件

型号	品牌	获取价格	描述	数据表
BC846BLT1G	ONSEMI	获取价格	General Purpose Transistors
BC846BLT3	ONSEMI	获取价格	General Purpose Transistors(NPN Silicon)
BC846BLT3	MOTOROLA	获取价格	100mA, 65V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
BC846BLT3G	ONSEMI	获取价格	General Purpose Transistors
BC846BM	NEXPERIA	获取价格	65 V, 100 mA NPN general-purpose transistorProduction
BC846BM	BL Galaxy Electrical	获取价格	65V,0.1A,General Purpose NPN Bipolar Transistor
BC846BM,315	ETC	获取价格	TRANS NPN 65V 0.1A 3DFN
BC846BM3	MCC	获取价格	Tape&Reel: 8Kpcs/Reel,;
BC846BM3	YANGJIE	获取价格	SOT-723
BC846BM3T5G	ONSEMI	获取价格	General Purpose Transistor NPN Silicon