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BC846AD87Z PDF预览

BC846AD87Z

更新时间: 2024-11-26 03:41:47
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
6页 83K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, NPN, Silicon

BC846AD87Z 数据手册

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BC846A  
BC846B  
BC847A  
BC847B  
BC847C  
C
C
E
E
B
B
SOT-23  
Mark: 1A. / 1B.  
SOT-23  
Mark: 1E. / 1F. / 1G.  
NPN General Purpose Amplifier  
This device is designed for low noise, high gain, general purpose  
amplifier applications at collector currents from 1.0 µA to 50 mA.  
Sourced from Process 07.  
3
Absolute Maximum Ratings*  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
VCEO  
Collector-Emitter Voltage  
Collector-Base Voltage  
65  
45  
80  
50  
6.0  
V
V
V
V
V
BC846 series  
BC847 series  
BC846 series  
BC847 series  
VCES  
VEBO  
IC  
Emitter-Base Voltage  
Collector Current - Continuous  
100  
mA  
Operating and Storage Junction Temperature Range  
-55 to +150  
C
°
TJ, Tstg  
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 150 degrees C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Thermal Characteristics  
TA = 25°C unless otherwise noted  
Symbol  
Characteristic  
Max  
Units  
*BC846 / BC847  
PD  
Total Device Dissipation  
Derate above 25 C  
325  
2.8  
mW  
mW/ C  
°
°
Thermal Resistance, Junction to Ambient  
357  
Rθ  
C/W  
°
JA  
*Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm.  
1997 Fairchild Semiconductor Corporation  

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