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BC846ALT1 PDF预览

BC846ALT1

更新时间: 2024-02-28 21:58:31
品牌 Logo 应用领域
安森美 - ONSEMI 晶体小信号双极晶体管
页数 文件大小 规格书
6页 96K
描述
General Purpose Transistors(NPN Silicon)

BC846ALT1 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active零件包装代码:SOT-23
包装说明:HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, 3 PIN针数:3
Reach Compliance Code:unknown风险等级:5
Is Samacsys:N最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:65 V配置:SINGLE
最小直流电流增益 (hFE):110JEDEC-95代码:TO-236
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
湿度敏感等级:NOT SPECIFIED元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:NPN
认证状态:COMMERCIAL表面贴装:YES
端子面层:MATTE TIN端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):100 MHzBase Number Matches:1

BC846ALT1 数据手册

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BC846ALT1 Series  
BC846, BC847 and BC848 are Preferred Devices  
General Purpose  
Transistors  
NPN Silicon  
Features  
http://onsemi.com  
Pb−Free Packages are Available  
Moisture Sensitivity Level: 1  
COLLECTOR  
3
ESD Rating − Human Body Model: >4000 V  
ESD Rating − Machine Model: >400 V  
1
BASE  
MAXIMUM RATINGS  
2
Rating  
Symbol  
Value  
Unit  
EMITTER  
Collector-Emitter Voltage  
V
CEO  
V
CBO  
V
EBO  
Vdc  
BC846  
65  
45  
30  
BC847, BC850  
BC848, BC849  
3
Collector−Base Voltage  
Vdc  
Vdc  
BC846  
BC847, BC850  
BC848, BC849  
80  
50  
30  
1
2
Emitter−Base Voltage  
SOT−23  
BC846  
BC847, BC850  
BC848, BC849  
6.0  
6.0  
5.0  
CASE 318  
STYLE 6  
Collector Current − Continuous  
I
C
100  
mAdc  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits  
are exceeded, device functional operation is not implied, damage may occur  
and reliability may be affected.  
MARKING DIAGRAM  
xxD  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
Total Device Dissipation FR5 Board,  
(Note 1)  
P
D
225  
mW  
xx  
D
= Specific Device Code  
= Date Code  
T = 25°C  
A
Derate above 25°C  
1.8  
mW/°C  
°C/W  
Thermal Resistance,  
R
556  
q
JA  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
Junction−to−Ambient (Note 1)  
dimensions section on page 5 of this data sheet.  
Total Device Dissipation  
P
D
300  
mW  
Alumina Substrate (Note 2)  
T = 25°C  
A
Preferred devices are recommended choices for future use  
Derate above 25°C  
2.4  
mW/°C  
°C/W  
and best overall value.  
Thermal Resistance,  
R
417  
q
JA  
Junction−to−Ambient (Note 2)  
Junction and Storage  
Temperature Range  
T , T  
55 to  
+150  
°C  
J
stg  
1. FR5 = 1.0 0.75 0.062 in.  
2. Alumina = 0.4 0.3 0.024 in 99.5% alumina.  
Semiconductor Components Industries, LLC, 2004  
1
Publication Order Number:  
June, 2004 − Rev. 6  
BC846ALT1/D  
 

BC846ALT1 替代型号

型号 品牌 替代类型 描述 数据表
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