Order this document
by BC846ALT1/D
SEMICONDUCTOR TECHNICAL DATA
NPN Silicon
COLLECTOR
3
1
BASE
BC846, BC847 and BC848 are
Motorola Preferred Devices
2
EMITTER
MAXIMUM RATINGS
BC847 BC848
BC850 BC849
Rating
Symbol BC846
Unit
V
3
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
V
V
V
65
80
45
50
30
30
CEO
CBO
EBO
1
V
2
6.0
100
6.0
100
5.0
100
V
Collector Current — Continuous
THERMAL CHARACTERISTICS
Characteristic
I
C
mAdc
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
Symbol
Max
Unit
Total Device Dissipation FR–5 Board, (1)
= 25°C
Derate above 25°C
P
D
T
A
225
1.8
mW
mW/°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
R
556
°C/W
JA
D
P
Alumina Substrate, (2) T = 25°C
300
2.4
mW
mW/°C
A
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
R
417
°C/W
°C
JA
T , T
J stg
–55 to +150
BC846ALT1 = 1A; BC846BLT1 = 1B; BC847ALT1 = 1E; BC847BLT1 = 1F;
BC847CLT1 = 1G; BC848ALT1 = 1J; BC848BLT1 = 1K; BC848CLT1 = 1L
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
OFF CHARACTERISTICS
Symbol
Min
Typ
Max
Unit
Collector–Emitter Breakdown Voltage BC846A,B
V
65
45
30
—
—
—
—
—
—
V
(BR)CEO
(I = 10 mA)
BC847A,B,C, BC850A,B,C
BC848A,B,C, BC849A,B,C
C
Collector–Emitter Breakdown Voltage BC846A,B
V
80
50
30
—
—
—
—
—
—
V
V
V
(BR)CES
(BR)CBO
(BR)EBO
(I = 10 µA, V
C EB
= 0)
BC847A,B,C, BC850A,B,C
BC848A,B,C, BC849A,B,C
Collector–Base Breakdown Voltage
BC846A,B
V
V
80
50
30
—
—
—
—
—
—
(I = 10 A)
C
BC847A,B,C, BC850A,B,C
BC848A,B,C, BC849A,B,C
Emitter–Base Breakdown Voltage
BC846A,B
6.0
6.0
5.0
—
—
—
—
—
—
(I = 1.0 A)
E
BC847A,B,C
BC848A,B,C, BC849A,B,C, BC850A,B,C
Collector Cutoff Current (V
(V
= 30 V)
= 30 V, T = 150°C)
I
—
—
—
—
15
5.0
nA
µA
CB
CB
CBO
A
1. FR–5 = 1.0 x 0.75 x 0.062 in
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Thermal Clad is a trademark of the Bergquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
MMotootorroollaa, SInmc. 1a9ll9–6Signal Transistors, FETs and Diodes Device Data
1