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BC807_07 PDF预览

BC807_07

更新时间: 2024-11-20 04:08:59
品牌 Logo 应用领域
德欧泰克 - DIOTEC 晶体晶体管
页数 文件大小 规格书
3页 482K
描述
Surface Mount General Purpose Si-Epi-Planar Transistors

BC807_07 数据手册

 浏览型号BC807_07的Datasheet PDF文件第2页浏览型号BC807_07的Datasheet PDF文件第3页 
BC807 SERIES  
PNP GENERAL PURPOSE TRANSISTORS  
Unit: inch (mm)  
SOT- 23  
225 mWatts  
POWER  
45 Volts  
VOLTAGE  
FEATURES  
• General purpose amplifier applications  
• PNP epitaxial silicon, planar design  
• Collector current IC = 500mA  
.119(3.00)  
.110(2.80)  
• Pb free product are available : 99% Sn above can meet RoHS  
environment substance directive request  
MECHANICALDATA  
.083(2.10)  
.066(1.70)  
.006(.15)  
.002(.05)  
Case: SOT-23, Plastic  
Terminals: Solderable per MIL-STD-750, Method 2026  
Approx. Weight: 0.008 gram  
Device Marking : BC807-16 : 7A  
BC807-25 : 7B  
.006(.15)MAX  
.020(.50)  
.013(.35)  
3
COLLECTOR  
BC807-40 : 7C  
Top View  
3
Collector  
1
BASE  
1
Base  
2
Emitter  
2
EMITTER  
MAXIMUM RATINGS  
PARAMETER  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
SYMBOL  
Value  
UNIT  
V
V
V
CEO  
CBO  
EBO  
-45  
-50  
v
v
-5.0  
-500  
225  
v
Collector Current - Continuous  
IC  
mA  
mW  
Max Power Dissipation (Note 1)  
P
TOT  
Junction and Storage Temperature  
Range  
TJ  
, TSTG  
-55 to 150  
oC  
THERMALCHARACTERISTICS  
PARAMETER  
SYMBOL  
Value  
UNIT  
Thermal Resistance , Junction to Ambient  
RθJA  
556  
oC/W  
Note 1 : Transistor mounted on FR-5 board 1.0x0.75x0.062 in  
STAD-SEP.24.2005  
PAGE . 1  

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