BC807-16 PDF预览

BC807-16

更新时间: 2025-08-24 21:53:39
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 开关放大器
页数 文件大小 规格书
6页 74K
描述
Switching and Amplifier Applications

BC807-16 数据手册

 浏览型号BC807-16的Datasheet PDF文件第2页浏览型号BC807-16的Datasheet PDF文件第3页浏览型号BC807-16的Datasheet PDF文件第4页浏览型号BC807-16的Datasheet PDF文件第5页浏览型号BC807-16的Datasheet PDF文件第6页 
BC807/BC808  
Switching and Amplifier Applications  
Suitable for AF-Driver stages and low power output stages  
Complement to BC817/BC818  
3
2
SOT-23  
1
1. Base 2. Emitter 3. Collector  
PNP Epitaxial Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Value  
Units  
V
V
V
Collector-Emitter Voltage  
Collector-Emitter Voltage  
CES  
: BC807  
: BC808  
-50  
-30  
V
V
CEO  
EBO  
: BC807  
: BC808  
-45  
-25  
V
V
Emitter-Base Voltage  
Collector Current (DC)  
-5  
-800  
V
I
mA  
mW  
°C  
C
P
Collector Power Dissipation  
Junction Temperature  
Storage Temperature  
-310  
C
T
T
150  
J
-65 ~ 150  
°C  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Test Condition  
Min.  
Typ.  
Max.  
Units  
BV  
Collector-Emitter Breakdown Voltage  
I = -10mA, I =0  
CEO  
CES  
EBO  
C
B
: BC807  
: BC808  
-45  
-25  
V
V
BV  
BV  
Collector-Emitter Breakdown Voltage  
I = -0.1mA, V =0  
C BE  
: BC807  
: BC808  
-50  
-30  
V
V
Emitter-Base Breakdown Voltage  
Collector Cut-off Current  
Emitter Cut-off Current  
DC Current Gain  
I = -0.1mA, I =0  
-5  
V
E
C
I
I
V
= -25V, V =0  
-100  
-100  
630  
nA  
nA  
CES  
EBO  
CE  
EB  
BE  
V
= -4V, I =0  
C
h
h
V
V
= -1V, I = -100mA  
100  
60  
FE1  
FE2  
CE  
CE  
C
= -1V, I = -300mA  
C
V
V
(sat)  
(on)  
Collector-Emitter Saturation Voltage  
Base-Emitter On Voltage  
I = -500mA, I = -50mA  
-0.7  
-1.2  
V
V
CE  
C
B
V
= -1V, I = -300mA  
C
BE  
CE  
f
Current Gain Bandwidth Product  
V
= -5V, I = -10mA  
100  
MHz  
T
CE  
C
f=50MHz  
C
Output Capacitance  
V
= -10V, f=1MHz  
12  
pF  
ob  
CB  
©2002 Fairchild Semiconductor Corporation  
Rev. A2, August 2002  

BC807-16 替代型号

型号 品牌 替代类型 描述 数据表
BC807-25 DIOTEC

功能相似

Surface mount Si-Epitaxial PlanarTransistors
BC817-40LT1G ONSEMI

功能相似

General Purpose Transistors(NPN Silicon)
BSR14 ONSEMI

功能相似

NPN 通用放大器

与BC807-16相关器件

型号 品牌 获取价格 描述 数据表
BC807-16,215 ETC

获取价格

TRANS PNP 45V 0.5A SOT23
BC807-16,235 NXP

获取价格

BC807; BC807W; BC327 - 45 V, 500 mA PNP general-purpose transistors TO-236 3-Pin
BC807-16,235 NEXPERIA

获取价格

元器件封装:TO-236AB;
BC807-16-13 DIODES

获取价格

Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC
BC807-16-6L BL Galaxy Electrical

获取价格

45V,0.5A,General Purpose PNP Bipolar Transistor
BC807-16-7 DIODES

获取价格

PNP SURFACE MOUNT TRANSISTOR
BC807-16-7-F BL Galaxy Electrical

获取价格

PNP SURFACE MOUNT TRANSISTOR
BC807-16-7-F DIODES

获取价格

Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, GREEN,
BC807-16-AQ DIOTEC

获取价格

Bipolar Transistors
BC807-16-AU PANJIT

获取价格

SOT-23