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BC807-16 PDF预览

BC807-16

更新时间: 2024-02-22 21:37:15
品牌 Logo 应用领域
金誉半导体 - HTSEMI 晶体晶体管
页数 文件大小 规格书
2页 274K
描述
TRANSISTOR (PNP)

BC807-16 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:SMALL OUTLINE, R-PDSO-G3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.56
最大集电极电流 (IC):0.5 A集电极-发射极最大电压:45 V
配置:SINGLE最小直流电流增益 (hFE):100
JESD-30 代码:R-PDSO-G3湿度敏感等级:1
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:PNP表面贴装:YES
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:10晶体管元件材料:SILICON
标称过渡频率 (fT):80 MHzBase Number Matches:1

BC807-16 数据手册

 浏览型号BC807-16的Datasheet PDF文件第2页 
BC807  
TRANSISTOR (PNP)  
BC807-16  
BC807-25  
BC807-40  
SOT-23  
FEATURES  
1. BASE  
·Ldeally suited for automatic insertion  
·epitaxial planar die construction  
·complementary NPN type available(BC817)  
2. EMITTER  
3. COLLECTOR  
MARKING: 807-16:5A; 807-25:5B; 807-40:5C  
MAXIMUM RATINGS (TA=25unless otherwise noted)  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Parameter  
Value  
Units  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
-50  
-45  
V
-5  
V
Collector Current -Continuous  
Collector Power Dissipation  
Junction Temperature  
-0.5  
0.3  
A
PC  
W
Tj  
150  
Tstg  
Storage Temperature  
-55-150  
ELECTRICAL CHARACTERISTICS (Tamb=25unless otherwise specified)  
Parameter  
Symbol  
VCBO  
VCEO  
VEBO  
ICBO  
Test conditions  
IC= -10μA, IE=0  
IC= -10mA, IB=0  
IE= -1μA, IC=0  
VCB= -45V, IE=0  
VCE= -40V, IB=0  
VEB= -4 V, IC=0  
MIN  
-50  
-45  
-5  
MAX UNIT  
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
V
V
V
-0.1  
-0.2  
-0.1  
μA  
μA  
μA  
Collector cut-off current  
ICEO  
Emitter cut-off current  
DC current gain  
IEBO  
807-16  
807-25  
807-40  
100  
160  
250  
250  
400  
600  
hFE(1)  
VCE= -1V, IC= -100mA  
Collector-emitter saturation voltage  
Base-emitter saturation voltage  
V
CE(sat)  
BE(sat)  
IC=-500mA, IB= -50mA  
IC= -500mA, IB= -50mA  
-0.7  
-1.2  
V
V
V
V
CE= -5V, IC= -10mA  
Transition frequency  
100  
MHz  
fT  
f=100MHz  
1
JinYu  
semiconductor  
www.htsemi.com  
Date:2011/05  

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