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BC807-40-G PDF预览

BC807-40-G

更新时间: 2024-11-26 01:13:35
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描述
General Purpose Transistors

BC807-40-G 数据手册

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General Purpose Transistors  
BC807-16-G/25-G/40-G (PNP)  
RoHS Device  
Features  
SOT-23  
- Ldeally suited for automatic insertion.  
- Epitaxial planar die construction.  
- Complementary NPN type available (BC817).  
0.119(3.00)  
0.110(2.80)  
3
Mechanical data  
0.056(1.40)  
0.047(1.20)  
- Case: SOT-23 Standard package, molded  
plastic.  
1
2
0.006(0.15)  
0.002(0.05)  
- Terminals: Tin plated, solderable per  
MIL-STD-750, method 2026  
- Mounting position: Any.  
0.083(2.10)  
0.066(1.70)  
0.044(1.10)  
0.035(0.90)  
0.103(2.60)  
0.086(2.20)  
- Weight: 0.008 grams(approx.).  
0.006(0.15) max  
0.007(0.20) min  
Maximum Ratings (at TA=25°C unless otherwise noted)  
0.020(0.50)  
0.013(0.35)  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Parameter  
Collector-Base voltage  
Collector-Emitter voltage  
Emitter-Base voltage  
Value  
-50  
Unit  
V
Dimensions in inches and (millimeter)  
Collector  
-45  
V
Diagram:  
3
-5  
V
Collector current-continuous  
Collector power dissipation  
-500  
300  
mA  
mW  
1
PC  
Base  
Thermal resistance form  
junction to ambient  
RθJA  
417  
°C/W  
2
Emitter  
Junction temperature range  
Storage temperature range  
TJ  
150  
°C  
°C  
TSTG  
-55 to +150  
Electrical Characteristics (at TA=25°C unless otherwise noted)  
Symbol  
Parameter  
Conditions  
Min  
Max  
Unit  
Collector-Base breakdown voltage  
Collector-Emitter breakdown voltage  
Emitter-Base breakdown voltage  
Collector cut-off current  
VCBO  
VCEO  
VEBO  
ICBO  
IC=-10μA, IE = 0  
-50  
-45  
-5  
V
V
IC=-10mA, IB=0  
IE=-1μA, IC=0  
V
VCB=-45V, IE=0  
-0.1  
-0.2  
-0.1  
600  
μA  
μA  
μA  
Collector cut-off current  
ICEO  
VCE=-40V, IB=0  
Emitter cut-off current  
IEBO  
VEB=-4V, IC=0  
hFE(1)  
hFE(2)  
VCE=-1V, IC=-100mA  
VCE=-1V, IC=-500mA  
IC=-500mA, IB=-50mA  
IC=-500mA, IB=-50mA  
VCE=-5V, IC=-10mA, f=100MHz  
100  
40  
DC current gain  
Collector-Emitter saturation voltage  
Base-Emitter saturation voltage  
Transition frequency  
VCE(sat)  
-0.7  
-1.2  
V
V
VBE(sat)  
fT  
100  
MHz  
Classification of hFE(1)  
Rank  
Range  
Marking  
BC807-16-G  
BC807-25-G  
160-400  
5B  
BC807-40-G  
250-600  
5C  
100-250  
5A  
REV:B  
Company reserves the right to improve product design , functions and reliability without notice.  
Page 1  
QW-BTR27  
Comchip Technology CO., LTD.  

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