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BC807-16QC-Q PDF预览

BC807-16QC-Q

更新时间: 2024-11-22 11:13:31
品牌 Logo 应用领域
安世 - NEXPERIA /
页数 文件大小 规格书
14页 327K
描述
45 V, 500 mA PNP general-purpose transistorsProduction

BC807-16QC-Q 数据手册

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BC807QC-Q series  
45 V, 500 mA PNP general-purpose transistors  
Rev. 2 — 4 May 2021  
Product data sheet  
1. General description  
PNP general-purpose transistor in an ultra small DFN1412D-3 (SOT8009) leadless Surface-  
Mounted Device (SMD) plastic package with side-wettable flanks.  
Table 1. Product overview  
Type number  
Package  
Name  
NPN complement  
JEDEC  
Version  
BC807-16QC-Q  
BC807-25QC-Q  
BC807-40QC-Q  
DFN1412D-3  
MO-340CA  
SOT8009  
BC817-16QC-Q  
BC817-25QC-Q  
BC817-40QC-Q  
2. Features and benefits  
High power dissipation capability  
High current  
Three current gain selections  
Suitable for Automatic Optical Inspection (AOI) of solder joint  
Smaller footprint compared to conventional leaded SMD packages  
Low package height of 0.5 mm  
Qualified according to AEC-Q101 and recommended for use in automotive applications  
3. Applications  
General-purpose switching and amplification  
Space restricted applications  
4. Quick reference data  
Table 2. Quick reference data  
Symbol  
VCEO  
IC  
Parameter  
Conditions  
Min  
Typ  
Max  
-45  
-500  
-1  
Unit  
V
collector-emitter voltage  
collector current  
peak collector current  
DC current gain  
BC807-16QC-Q  
BC807-25QC-Q  
BC807-40QC-Q  
open base; Tamb = 25 °C  
Tamb = 25 °C  
-
-
-
-
-
-
mA  
A
ICM  
single pulse; tp ≤ 1 ms; Tamb = 25 °C  
hFE  
VCE = -1 V; IC = -100 mA Tamb = 25 °C [1]  
100  
160  
250  
-
-
-
250  
400  
600  
[1]  
[1]  
[1] pulsed; tp ≤ 300 μs; δ ≤ 0.02  
 
 
 
 
 

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