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BC807-16W PDF预览

BC807-16W

更新时间: 2024-09-29 08:49:39
品牌 Logo 应用领域
美微科 - MCC 晶体晶体管光电二极管放大器
页数 文件大小 规格书
4页 274K
描述
PNP Silicon General Purpose Transistors

BC807-16W 数据手册

 浏览型号BC807-16W的Datasheet PDF文件第2页浏览型号BC807-16W的Datasheet PDF文件第3页浏览型号BC807-16W的Datasheet PDF文件第4页 
BC807-16W  
BC807-25W  
BC807-40W  
M C C  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TM  
Micro Commercial Components  
Features  
·
Lead Free Finish/RoHS Compliant ("P" Suffix designates  
PNP Silicon  
General Purpose  
Transistors  
RoHS Compliant. See ordering information)  
·
Epoxy meets UL 94 V-0 flammability rating  
·
·
Moisure Sensitivity Level 1  
Capable of 0.2Watts of Power Dissipation.  
·
Collector-current 0.5A  
Operating and storage junction temperature range: -55OC to +150OC  
Mechanical Data  
SOT-323  
Case: SOT-323 Molded Plastic  
A
D
C
Terminals: Solderable per MIL-STD-202, Method 208  
Weight: 0.005 grams (approx.)  
Device Marking:  
BC807-16W  
BC807-25W  
BC807-40W  
5A  
5B  
5C  
C
B
Electrical Characteristics @ 25OC Unless Otherwise Specified  
E
B
F
E
Symbol  
Parameter  
Min  
Max  
Units  
OFF CHARACTERISTICS  
V(BR)CEO  
V(BR)CBO  
V(BR)EBO  
ICBO  
Collector-Emitter Breakdown Voltage  
45  
50  
5.0  
---  
---  
---  
---  
---  
Vdc  
Vdc  
H
G
J
(I =10mAdc, IB=0)  
C
Collector-Base Breakdown Voltage  
K
(I =10uAdc, IE=0)  
C
DIMENSIONS  
Collector-Emitter Breakdown Voltage  
---  
Vdc  
(I =1.0uAdc, IC=0)  
E
INCHES  
MM  
Collector Cutoff Current  
(VCB=20Vdc,IE=0)  
Collector Cutoff Current  
(VCE=20V dc,IB=0)  
Emitter Cutoff Current  
(VEB=5.0Vdc, IC=0)  
0.1  
0.2  
0.1  
uAdc  
uAdc  
uAdc  
DIM  
A
B
C
D
E
MIN  
.071  
.045  
.079  
MAX  
.087  
.053  
.087  
MIN  
1.80  
1.15  
2.00  
MAX  
2.20  
1.35  
2.20  
NOTE  
ICEO  
.026 Nominal  
0.65Nominal  
1.20  
.047  
.055  
.016  
.004  
.039  
.010  
.016  
1.40  
.40  
.100  
1.00  
.250  
.40  
IEBO  
F
.012  
.000  
.035  
.004  
.012  
.30  
.000  
.90  
.100  
.30  
G
H
J
ON CHARACTERISTICS  
hFE(1)  
K
DC Current Gain  
(IC=100mAdc, VCE=1.0Vdc)  
BC807-16W  
BC807-25W  
BC807-40W  
100  
160  
250  
250  
400  
600  
---  
---  
---  
0.70  
hFE(2)  
VCE(sat)  
VBE(on)  
DC Current Gain  
(IC=500mAdc, VCE=1.0Vdc)  
Collector-Emitter Saturation Voltage  
(IC=500mAdc, IB=50mAdc)  
Base-Emitter Voltage  
40  
---  
---  
---  
---  
Vdc  
Vdc  
0.90  
0.7  
1.2  
1.90  
MM  
(IC=500mAdc,VCE=1Vdc)  
SMALL SIGNAL CHARACTERISTICS  
0.65  
fT  
Current-Gain-Bandwidth Product  
80  
---  
MHz  
(VCE=5.0V, f=100MHz, I C=10mA)  
Collector output capacitance  
(VCB=10V, f=1MHz)  
0.65  
Cob  
10  
pF  
www.mccsemi.com  
1 of 4  
Revision: A  
2011/01/01  

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