Datasheet > BC807-16W

BC807-16W

更新时间： 2024-11-25 08:49:39

品牌	Logo	应用领域
金誉半导体 - HTSEMI		晶体晶体管光电二极管放大器
页数	文件大小	规格书
2页	237K
描述
TRANSISTOR (PNP)

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中文翻译

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数据手册

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BC807-16W 数据手册

BC807W

TRANSISTOR (PNP)

BC807-16W

BC807-25W

BC807-40W

SOT-23

FEATURES

1. BASE

·^{Ldeally suited for automatic insertion}

·^{epitaxial planar die construction}

·^{complementary NPN type available(BC817)}

2. EMITTER

3. COLLECTOR

MARKING: 807-16:5A; 807-25:5B; 807-40:5C

MAXIMUM RATINGS (T_A=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Value

Units

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

-50

-45

-5

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

-0.5

0.3

P_C

℃

T_j

150

T_stg

Storage Temperature

-55-150

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_CBO

Test conditions

I_C= -10μA, I_E=0

I_C= -10mA, I_B=0

I_E= -1μA, I_C=0

V_CB= -45V, I_E=0

V_CE= -40V, I_B=0

V_EB= -4 V, I_C=0

MIN

-50

-45

-5

MAX UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

-0.1

-0.2

-0.1

μA

Collector cut-off current

I_CEO

Emitter cut-off current

DC current gain

I_EBO

807-16

807-25

807-40

100

160

250

400

600

h_FE(1)

V_CE= -1V, I_C= -100mA

Collector-emitter saturation voltage

Base-emitter saturation voltage

_CE(sat)

_BE(sat)

I_C=-500mA, I_B= -50mA

I_C= -500mA, I_B= -50mA

-0.7

-1.2

_CE= -5V, I_C= -10mA

Transition frequency

100

MHz

f_T

f=100MHz

JinYu

semiconductor

www.htsemi.com

Date:2011/05

中文翻译

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