BC68PAS series
20 V, 2 A NPN medium power transistors
Rev. 1 — 19 June 2015
Product data sheet
1. Product profile
1.1 General description
NPN medium power transistors in an ultra thin DFN2020D-3 (SOT1061D) leadless small
Surface-Mounted Device (SMD) plastic package with medium power capability and visible
and solderable side pads.
PNP complement: BC69PAS series
1.2 Features and benefits
High collector current capability
Two current gain selections
IC and ICM
Reduced Printed-Circuit Board (PCB)
Leadless very small SMD plastic
area requirements
package with medium power capability
Exposed heat sink for excellent thermal Suitable for Automatic Optical
and electrical conductivity
Inspection (AOI) of solder joint
AEC-Q101 qualified
1.3 Applications
Linear voltage regulators
Battery driven devices
MOSFET drivers
Low-side switches
Power management
Amplifiers
1.4 Quick reference data
Table 1.
Quick reference data
Tamb = 25 C unless otherwise specified
Symbol Parameter Conditions
VCEO collector-emitter voltage open base
IC
Min Typ Max Unit
-
-
-
-
-
-
20
2
V
A
A
collector current
peak collector current
DC current gain
-
ICM
hFE
single pulse; tp 1 ms
VCE = 1 V; IC = 500 mA
VCE = 1 V; IC = 500 mA
-
3
[1]
[1]
85
160
375
375
hFE selection -25
[1] Pulse test: tp 300 s; 0.02.