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BC640RLRM PDF预览

BC640RLRM

更新时间: 2024-10-26 13:05:51
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 晶体晶体管开关PC
页数 文件大小 规格书
4页 120K
描述
Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-92

BC640RLRM 技术参数

生命周期:Transferred包装说明:CYLINDRICAL, O-PBCY-T3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.65
Is Samacsys:N最大集电极电流 (IC):0.5 A
集电极-发射极最大电压:80 V配置:SINGLE
最小直流电流增益 (hFE):25JEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-T3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL极性/信道类型:PNP
功耗环境最大值:1.5 W认证状态:Not Qualified
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:BOTTOM晶体管元件材料:SILICON
标称过渡频率 (fT):150 MHzVCEsat-Max:0.5 V
Base Number Matches:1

BC640RLRM 数据手册

 浏览型号BC640RLRM的Datasheet PDF文件第2页浏览型号BC640RLRM的Datasheet PDF文件第3页浏览型号BC640RLRM的Datasheet PDF文件第4页 
Order this document  
by BC636/D  
SEMICONDUCTOR TECHNICAL DATA  
PNP Silicon  
COLLECTOR  
2
3
BASE  
1
EMITTER  
1
MAXIMUM RATINGS  
2
3
BC  
BC  
BC  
636  
–45  
–45  
638  
640  
–80  
–80  
Rating  
CollectorEmitter Voltage  
CollectorBase Voltage  
EmitterBase Voltage  
Symbol  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
CASE 29–04, STYLE 14  
TO–92 (TO–226AA)  
V
CEO  
V
CBO  
V
EBO  
–60  
–60  
–5.0  
–0.5  
Collector Current — Continuous  
I
C
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
625  
5.0  
mW  
mW/°C  
A
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
1.5  
12  
Watt  
mW/°C  
C
Operating and Storage Junction  
Temperature Range  
T , T  
55 to +150  
°C  
J
stg  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
200  
Unit  
°C/W  
°C/W  
Thermal Resistance, Junction to Ambient  
Thermal Resistance, Junction to Case  
R
R
JA  
JC  
83.3  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
OFF CHARACTERISTICS  
CollectorEmitter Breakdown Voltage*  
(I = –10 mAdc, I = 0)  
V
Vdc  
Vdc  
Vdc  
(BR)CEO  
BC636  
BC638  
BC640  
–45  
–60  
–80  
C
B
CollectorBase Breakdown Voltage  
(I = –100 µAdc, I = 0)  
V
(BR)CBO  
BC636  
BC638  
BC640  
–45  
–60  
–80  
C
E
EmitterBase Breakdown Voltage  
(I = –10 Adc, I = 0)  
V
–5.0  
(BR)EBO  
E
C
Collector Cutoff Current  
I
CBO  
(V  
CB  
(V  
CB  
= –30 Vdc, I = 0)  
–100  
–10  
nAdc  
µAdc  
E
= –30 Vdc, I = 0, T = 125°C)  
E
A
1. Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%.  
Motorola, Inc. 1996  

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