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BC646BDW1T1 PDF预览

BC646BDW1T1

更新时间: 2024-11-25 22:14:55
品牌 Logo 应用领域
乐山 - LRC 晶体晶体管
页数 文件大小 规格书
5页 157K
描述
Dual General Purpose Transistors(NPN Duals)

BC646BDW1T1 数据手册

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LESHAN RADIO COMPANY, LTD.  
Dual General Purpose Transistors  
NPN Duals  
These transistors are designed for general purpose amplifier  
applications. They are housed in the SOT–363/SC–88 which is  
designed for low power surface mount applications.  
BC846BDW1T1  
BC847BDW1T1  
BC847CDW1T1  
BC848BDW1T1  
BC848CDW1T1  
6
Q2  
1
5
4
6
5
4
See Table  
Q1  
1
2
3
3
2
SOT 363 /SC 88  
CASE 419B STYLE1  
MAXIMUM RATINGS  
Rating  
Symbol BC846  
BC847 BC848  
Unit  
V
Collector–Emitter Voltage  
Collector–Base Voltage  
Emitter–Base Voltage  
V CEO  
V CBO  
V EBO  
I C  
65  
80  
45  
50  
30  
30  
V
6.0  
100  
6.0  
100  
5.0  
100  
V
Collector Current  
-Continuous  
mAdc  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
Total Device Dissipation  
Per Device  
P D  
380  
250  
mW  
mW  
FR– 5 Board, (1) TA = 25°C  
Derate above 25°C  
3.0  
328  
mW/°C  
°C/W  
°C  
Thermal Resistance, Junction to Ambient  
Junction and Storage Temperature  
1. FR–5 = 1.0 x 0.75 x 0.062 in.  
R θJA  
T J , T stg  
–55 to +150  
ORDERING INFORMATION  
Device  
Package  
Shipping  
BC846BDW1T1  
BC847BDW1T1  
BC847CDW1T1  
BC848BDW1T1  
BC848CDW1T1  
SOT–363  
SOT–363  
SOT–363  
SOT–363  
SOT–363  
3000 Units/Reel  
3000 Units/Reel  
3000 Units/Reel  
3000 Units/Reel  
3000 Units/Reel  
BC846b–1/5  

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