BC640TF

更新时间： 2024-11-26 12:33:47

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体晶体管
页数	文件大小	规格书
5页	111K
描述
PNP Epitaxial Silicon Transistor

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数据手册

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BC640TF 数据手册

March 2009

BC640

PNP Epitaxial Silicon Transistor

Switching and Amplifier Applications

•

Complement to BC639

TO-92

1. Emitter 2. Collector 3. Base

Absolute Maximum Ratings

= 25°C unless otherwise noted

Symbol

Parameter

Value

-100

-80

Units

V_CER

V_CES

V_CEO

V_EBO

I_C

Collector-Emitter Voltage at R_BE=1KΩ

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

-5

-1

I_CP

Peak Collector Current

Base Current

-1.5

I_B

-100

P_C

Collector Power Dissipation

Junction Temperature

Storage Temperature

T_J

150

°C

T_STG

-65 ~ 150

Electrical Characteristics

T = 25°C unless otherwise noted

Symbol

BV_CEO

I_CBO

Parameter

Test Condition

Min.

Typ.

Max.

Units

Collector-Emitter Breakdown Voltage

Collector Cut-off Current

Emitter Cut-off Current

I_C= -10mA, I_B=0

-80

V_CB= -30V, I_E=0

V_EB= -5V, I_C=0

-0.1

-10

μA

I_EBO

μA

h_FE1

h_FE2

h_FE3

DC Current Gain

V_CE= -2V, I_C= -5mA

_CE= -2V, I_C= -150mA

_CE= -2V, I_C= -500mA

160

_CE(sat)

Collector-Emitter Saturation Voltage

Base-Emitter On Voltage

I_C= -500mA, I_B= -50mA

V_CE= -2V, I_C= -500mA

-0.5

-1

V_BE(on)

f_T

Current Gain Bandwidth Product

V_CE= -5V, I_C= -10mA,

f=50MHz

100

MHz

BC640 Rev. C3

www.fairchildsemi.com

12 3 4 5

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