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BC640ZL1G PDF预览

BC640ZL1G

更新时间: 2024-11-26 06:41:39
品牌 Logo 应用领域
安森美 - ONSEMI 晶体小信号双极晶体管
页数 文件大小 规格书
4页 61K
描述
High Current Transistors

BC640ZL1G 技术参数

是否无铅: 不含铅生命周期:Obsolete
零件包装代码:TO-92包装说明:LEAD FREE, CASE 29-11, TO-226, 3 PIN
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.75
Factory Lead Time:1 week风险等级:5.1
其他特性:EUROPEAN PART NUMBER最大集电极电流 (IC):0.5 A
集电极-发射极最大电压:80 V配置:SINGLE
最小直流电流增益 (hFE):40JEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-T3JESD-609代码:e1
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):260极性/信道类型:PNP
最大功率耗散 (Abs):1.5 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Tin/Silver/Copper (Sn/Ag/Cu)端子形式:THROUGH-HOLE
端子位置:BOTTOM处于峰值回流温度下的最长时间:40
晶体管元件材料:SILICON标称过渡频率 (fT):150 MHz
Base Number Matches:1

BC640ZL1G 数据手册

 浏览型号BC640ZL1G的Datasheet PDF文件第2页浏览型号BC640ZL1G的Datasheet PDF文件第3页浏览型号BC640ZL1G的Datasheet PDF文件第4页 
BC640, BC640−16  
High Current Transistors  
PNP Silicon  
Features  
Pb−Free Packages are Available*  
http://onsemi.com  
COLLECTOR  
2
MAXIMUM RATINGS  
3
Rating  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
Symbol  
Value  
−80  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
BASE  
V
CEO  
V
CBO  
V
EBO  
−80  
1
EMITTER  
−5.0  
−0.5  
Collector Current − Continuous  
I
C
Total Device Dissipation @ T = 25°C  
P
D
625  
5.0  
mW  
mW/°C  
A
Derate above 25°C  
Total Device Dissipation @ T = 25°C  
P
1.5  
12  
W
mW/°C  
C
D
TO−92  
CASE 29  
STYLE 14  
Derate above 25°C  
Operating and Storage Junction  
Temperature Range  
T , T  
J
−55 to +150  
°C  
stg  
1
1
THERMAL CHARACTERISTICS  
Characteristic  
2
2
3
3
Symbol  
Max  
200  
Unit  
°C/W  
°C/W  
STRAIGHT LEAD  
BULK PACK  
BENT LEAD  
TAPE & REEL  
AMMO PACK  
Thermal Resistance, Junction−to−Ambient  
Thermal Resistance, Junction−to−Case  
R
q
JA  
JC  
R
83.3  
q
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
MARKING DIAGRAMS  
BC  
640  
BC64  
0−16  
AYWW G  
G
AYWW G  
G
A
Y
= Assembly Location  
= Year  
WW  
G
= Work Week  
= Pb−Free Package  
(Note: Microdot may be in either location)  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 2 of this data sheet.  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
© Semiconductor Components Industries, LLC, 2007  
1
Publication Order Number:  
March, 2007 − Rev. 0  
BC640/D  

BC640ZL1G 替代型号

型号 品牌 替代类型 描述 数据表
BC640TA ONSEMI

类似代替

PNP Bipolar Transistor
BC640TA FAIRCHILD

功能相似

PNP Epitaxial Silicon Transistor

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