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BC640TAR PDF预览

BC640TAR

更新时间: 2024-11-26 12:33:47
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体小信号双极晶体管开关
页数 文件大小 规格书
5页 111K
描述
PNP Epitaxial Silicon Transistor

BC640TAR 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-92包装说明:CYLINDRICAL, O-PBCY-T3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.29.00.75
风险等级:5.65最大集电极电流 (IC):1 A
集电极-发射极最大电压:80 V配置:SINGLE
最小直流电流增益 (hFE):25JEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-T3JESD-609代码:e3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):NOT APPLICABLE极性/信道类型:PNP
最大功率耗散 (Abs):0.8 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT APPLICABLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):100 MHzBase Number Matches:1

BC640TAR 数据手册

 浏览型号BC640TAR的Datasheet PDF文件第2页浏览型号BC640TAR的Datasheet PDF文件第3页浏览型号BC640TAR的Datasheet PDF文件第4页浏览型号BC640TAR的Datasheet PDF文件第5页 
March 2009  
BC640  
PNP Epitaxial Silicon Transistor  
Switching and Amplifier Applications  
Complement to BC639  
TO-92  
1
1. Emitter 2. Collector 3. Base  
Absolute Maximum Ratings  
T
= 25°C unless otherwise noted  
a
Symbol  
Parameter  
Value  
-100  
-100  
-80  
Units  
V
VCER  
VCES  
VCEO  
VEBO  
IC  
Collector-Emitter Voltage at RBE=1KΩ  
Collector-Emitter Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
V
V
-5  
V
-1  
A
ICP  
Peak Collector Current  
Base Current  
-1.5  
A
IB  
-100  
1
mA  
W
PC  
Collector Power Dissipation  
Junction Temperature  
Storage Temperature  
TJ  
150  
°C  
°C  
TSTG  
-65 ~ 150  
Electrical Characteristics  
T = 25°C unless otherwise noted  
a
Symbol  
BVCEO  
ICBO  
Parameter  
Test Condition  
Min.  
Typ.  
Max.  
Units  
V
Collector-Emitter Breakdown Voltage  
Collector Cut-off Current  
Emitter Cut-off Current  
IC= -10mA, IB=0  
-80  
VCB= -30V, IE=0  
VEB= -5V, IC=0  
-0.1  
-10  
μA  
IEBO  
μA  
hFE1  
hFE2  
hFE3  
DC Current Gain  
VCE= -2V, IC= -5mA  
25  
40  
25  
V
V
CE= -2V, IC= -150mA  
CE= -2V, IC= -500mA  
160  
V
CE (sat)  
Collector-Emitter Saturation Voltage  
Base-Emitter On Voltage  
IC= -500mA, IB= -50mA  
VCE= -2V, IC= -500mA  
-0.5  
-1  
V
V
VBE (on)  
fT  
Current Gain Bandwidth Product  
VCE= -5V, IC= -10mA,  
f=50MHz  
100  
MHz  
© 2009 Fairchild Semiconductor Corporation  
BC640 Rev. C3  
www.fairchildsemi.com  
1

BC640TAR 替代型号

型号 品牌 替代类型 描述 数据表
BC640TA FAIRCHILD

完全替代

PNP Epitaxial Silicon Transistor

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