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BC640_09 PDF预览

BC640_09

更新时间: 2024-10-26 12:33:47
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管
页数 文件大小 规格书
5页 111K
描述
PNP Epitaxial Silicon Transistor

BC640_09 数据手册

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March 2009  
BC640  
PNP Epitaxial Silicon Transistor  
Switching and Amplifier Applications  
Complement to BC639  
TO-92  
1
1. Emitter 2. Collector 3. Base  
Absolute Maximum Ratings  
T
= 25°C unless otherwise noted  
a
Symbol  
Parameter  
Value  
-100  
-100  
-80  
Units  
V
VCER  
VCES  
VCEO  
VEBO  
IC  
Collector-Emitter Voltage at RBE=1KΩ  
Collector-Emitter Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
V
V
-5  
V
-1  
A
ICP  
Peak Collector Current  
Base Current  
-1.5  
A
IB  
-100  
1
mA  
W
PC  
Collector Power Dissipation  
Junction Temperature  
Storage Temperature  
TJ  
150  
°C  
°C  
TSTG  
-65 ~ 150  
Electrical Characteristics  
T = 25°C unless otherwise noted  
a
Symbol  
BVCEO  
ICBO  
Parameter  
Test Condition  
Min.  
Typ.  
Max.  
Units  
V
Collector-Emitter Breakdown Voltage  
Collector Cut-off Current  
Emitter Cut-off Current  
IC= -10mA, IB=0  
-80  
VCB= -30V, IE=0  
VEB= -5V, IC=0  
-0.1  
-10  
μA  
IEBO  
μA  
hFE1  
hFE2  
hFE3  
DC Current Gain  
VCE= -2V, IC= -5mA  
25  
40  
25  
V
V
CE= -2V, IC= -150mA  
CE= -2V, IC= -500mA  
160  
V
CE (sat)  
Collector-Emitter Saturation Voltage  
Base-Emitter On Voltage  
IC= -500mA, IB= -50mA  
VCE= -2V, IC= -500mA  
-0.5  
-1  
V
V
VBE (on)  
fT  
Current Gain Bandwidth Product  
VCE= -5V, IC= -10mA,  
f=50MHz  
100  
MHz  
© 2009 Fairchild Semiconductor Corporation  
BC640 Rev. C3  
www.fairchildsemi.com  
1

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