生命周期: | Obsolete | 包装说明: | CYLINDRICAL, O-PBCY-T3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.21.00.95 | 风险等级: | 5.13 |
最大集电极电流 (IC): | 1 A | 集电极-发射极最大电压: | 80 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 25 |
JEDEC-95代码: | TO-92 | JESD-30 代码: | O-PBCY-T3 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | ROUND | 封装形式: | CYLINDRICAL |
极性/信道类型: | PNP | 认证状态: | Not Qualified |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | BOTTOM | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 100 MHz |
VCEsat-Max: | 0.5 V | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BC640AMO | NXP |
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TRANSISTOR 1000 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, BIP General Purpose Sma | |
BC640-AP | MCC |
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Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, RO | |
BC640-AP-HF | MCC |
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Small Signal Bipolar Transistor, | |
BC640BU | FAIRCHILD |
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PNP Epitaxial Silicon Transistor | |
BC640D26Z | FAIRCHILD |
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Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-92 | |
BC640D27Z | FAIRCHILD |
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Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-92 | |
BC640-D28Z | FAIRCHILD |
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Transistor | |
BC640D74Z | FAIRCHILD |
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Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-92 | |
BC640D75Z | FAIRCHILD |
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Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-92 | |
BC640G | ONSEMI |
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High Current Transistors |