5秒后页面跳转
BC640D27Z PDF预览

BC640D27Z

更新时间: 2024-10-26 19:58:47
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 开关晶体管
页数 文件大小 规格书
4页 36K
描述
Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-92

BC640D27Z 技术参数

生命周期:Obsolete包装说明:CYLINDRICAL, O-PBCY-T3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.29.00.75风险等级:5.13
最大集电极电流 (IC):1 A集电极-发射极最大电压:80 V
配置:SINGLE最小直流电流增益 (hFE):40
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-T3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL极性/信道类型:PNP
认证状态:Not Qualified表面贴装:NO
端子形式:THROUGH-HOLE端子位置:BOTTOM
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):100 MHzBase Number Matches:1

BC640D27Z 数据手册

 浏览型号BC640D27Z的Datasheet PDF文件第2页浏览型号BC640D27Z的Datasheet PDF文件第3页浏览型号BC640D27Z的Datasheet PDF文件第4页 
BC636/638/640  
Switching and Amplifier Applications  
Complement to BC635/637/639  
TO-92  
1. Emitter 2. Collector 3. Base  
1
PNP Epitaxial Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Value  
Units  
V
V
V
V
Collector-Emitter Voltage at R =1KΩ  
CER  
BE  
: BC636  
: BC638  
: BC640  
-45  
-60  
-100  
V
V
V
Collector-Emitter Voltage  
: BC636  
CES  
CEO  
EBO  
-45  
-60  
-100  
V
V
V
: BC638  
: BC640  
Collector-Emitter Voltage  
: BC636  
-45  
-60  
-80  
V
V
V
: BC638  
: BC640  
Emitter-Base Voltage  
Collector Current  
-5  
-1  
V
A
I
I
I
C
Peak Collector Current  
Base Current  
-1.5  
A
CP  
B
-100  
1
mA  
W
°C  
°C  
P
Collector Dissipation  
Junction Temperature  
Storage Temperature  
C
T
T
150  
J
-65 ~ 150  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Test Condition  
Min.  
Typ.  
Max.  
Units  
BV  
Collector-Emitter Breakdown Voltage  
I = -10mA, I =0  
CEO  
C
B
: BC636  
: BC638  
: BC640  
-45  
-60  
-80  
V
V
V
I
I
Collector Cut-off Current  
Emitter Cut-off Current  
V
= -30V, I =0  
-0.1  
-0.1  
µA  
µA  
CBO  
CB  
EB  
E
V
= -5V, I =0  
C
EBO  
h
h
DC Current Gain  
: All  
V
V
= -2V, I = -5mA  
25  
40  
40  
25  
FE1  
FE2  
CE  
CE  
C
: BC636  
: BC638/BC640  
: All  
= -2V, I = -150mA  
250  
160  
C
h
V
= -2V, I = -500mA  
CE C  
FE3  
V
V
(sat)  
(on)  
Collector-Emitter Saturation Voltage  
Base-Emitter On Voltage  
I = -500mA, I = -50mA  
-0.5  
-1  
V
V
CE  
C
B
V
= -2V, I = -500mA  
C
BE  
CE  
f
Current Gain Bandwidth Product  
V
= -5V, I = -10mA,  
100  
MHz  
T
CE  
C
f=50MHz  
©2000 Fairchild Semiconductor International  
Rev. A, February 2000  

与BC640D27Z相关器件

型号 品牌 获取价格 描述 数据表
BC640-D28Z FAIRCHILD

获取价格

Transistor
BC640D74Z FAIRCHILD

获取价格

Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-92
BC640D75Z FAIRCHILD

获取价格

Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-92
BC640G ONSEMI

获取价格

High Current Transistors
BC640-HAF SWST

获取价格

小信号晶体管
BC640J05Z FAIRCHILD

获取价格

Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, 3
BC640J18Z TI

获取价格

1500mA, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
BC640J18Z FAIRCHILD

获取价格

Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, 3
BC640-L34Z FAIRCHILD

获取价格

Transistor
BC640RL MOTOROLA

获取价格

500mA, 80V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92