Datasheet > BC640-L34Z

BC640-L34Z

更新时间： 2024-10-26 19:41:35

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
5页	419K
描述
Transistor

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中文翻译

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技术参数
数据手册

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BC640-L34Z 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.92	最大集电极电流 (IC)：	1 A
配置：	Single	最小直流电流增益 (hFE)：	40
JESD-609代码：	e0	最高工作温度：	150 °C
极性/信道类型：	PNP	最大功率耗散 (Abs)：	0.8 W
子类别：	Other Transistors	表面贴装：	NO
端子面层：	Tin/Lead (Sn/Pb)	Base Number Matches：	1

BC640-L34Z 数据手册

BC640

PNP Epitaxial Silicon Transistor

Switching and Amplifier Applications

•

Complement to BC639

TO-92

1. Emitter 2. Collector 3. Base

Absolute Maximum Ratings

= 25°C unless otherwise noted

Symbol

Parameter

Value

-100

-80

Units

Collector-Emitter Voltage at R =1KΩ

CER

CES

CEO

EBO

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

-5

-1

Peak Collector Current

Base Current

-1.5

-100

Collector Power Dissipation

Junction Temperature

Storage Temperature

150

°C

-65 ~ 150

STG

Electrical Characteristics

T = 25°C unless otherwise noted

Symbol

Parameter

Test Condition

Min.

-80

Typ.

Max.

Units

Collector-Emitter Breakdown Voltage

Collector Cut-off Current

Emitter Cut-off Current

I = -10mA, I =0

CEO

CBO

EBO

= -30V, I =0

-0.1

µA

= -5V, I =0

DC Current Gain

= -2V, I = -5mA

FE1

FE2

FE3

= -2V, I = -150mA

160

= -2V, I = -500mA

(sat)

(on)

Collector-Emitter Saturation Voltage

Base-Emitter On Voltage

I = -500mA, I = -50mA

-0.5

-1

= -2V, I = -500mA

Current Gain Bandwidth Product

= -5V, I = -10mA,

100

MHz

f=50MHz

BC640 Rev. C2

www.fairchildsemi.com

12 3 4 5

中文翻译

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