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BC640-D28Z PDF预览

BC640-D28Z

更新时间: 2024-10-26 19:41:35
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
5页 419K
描述
Transistor

BC640-D28Z 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:,Reach Compliance Code:unknown
风险等级:5.92最大集电极电流 (IC):1 A
配置:Single最小直流电流增益 (hFE):40
JESD-609代码:e0最高工作温度:150 °C
极性/信道类型:PNP最大功率耗散 (Abs):0.8 W
子类别:Other Transistors表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)Base Number Matches:1

BC640-D28Z 数据手册

 浏览型号BC640-D28Z的Datasheet PDF文件第2页浏览型号BC640-D28Z的Datasheet PDF文件第3页浏览型号BC640-D28Z的Datasheet PDF文件第4页浏览型号BC640-D28Z的Datasheet PDF文件第5页 
BC640  
PNP Epitaxial Silicon Transistor  
Switching and Amplifier Applications  
Complement to BC639  
TO-92  
1
1. Emitter 2. Collector 3. Base  
Absolute Maximum Ratings  
T
= 25°C unless otherwise noted  
a
Symbol  
Parameter  
Value  
-100  
-100  
-80  
Units  
V
V
V
V
V
Collector-Emitter Voltage at R =1K  
CER  
CES  
CEO  
EBO  
BE  
Collector-Emitter Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
V
V
-5  
V
I
I
I
-1  
A
C
Peak Collector Current  
Base Current  
-1.5  
A
CP  
B
-100  
1
mA  
W
P
Collector Power Dissipation  
Junction Temperature  
Storage Temperature  
C
T
T
150  
°C  
°C  
J
-65 ~ 150  
STG  
Electrical Characteristics  
T = 25°C unless otherwise noted  
a
Symbol  
Parameter  
Test Condition  
Min.  
-80  
Typ.  
Max.  
Units  
V
BV  
Collector-Emitter Breakdown Voltage  
Collector Cut-off Current  
Emitter Cut-off Current  
I = -10mA, I =0  
CEO  
CBO  
EBO  
C
B
I
I
V
= -30V, I =0  
-0.1  
-0.1  
µA  
µA  
CB  
EB  
E
V
= -5V, I =0  
C
h
h
h
DC Current Gain  
V
V
V
= -2V, I = -5mA  
25  
40  
25  
FE1  
FE2  
FE3  
CE  
CE  
CE  
C
= -2V, I = -150mA  
160  
C
= -2V, I = -500mA  
C
V
V
(sat)  
(on)  
Collector-Emitter Saturation Voltage  
Base-Emitter On Voltage  
I = -500mA, I = -50mA  
-0.5  
-1  
V
V
CE  
BE  
C
B
V
= -2V, I = -500mA  
C
CE  
f
Current Gain Bandwidth Product  
V
= -5V, I = -10mA,  
100  
MHz  
T
CE  
C
f=50MHz  
©2005 Fairchild Semiconductor Corporation  
BC640 Rev. C2  
1
www.fairchildsemi.com  

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