Datasheet > BC636_05

BC636_05

更新时间： 2024-11-11 03:21:27

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体晶体管
页数	文件大小	规格书
5页	420K
描述
PNP Epitaxial Silicon Transistor

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数据手册

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BC636_05 数据手册

BC636

PNP Epitaxial Silicon Transistor

Switching and Amplifier Applications

•

Complement to BC635

TO-92

1. Emitter 2. Collector 3. Base

Absolute Maximum Ratings

= 25°C unless otherwise noted

Symbol

Parameter

Value

-45

Units

Collector-Emitter Voltage at R =1KΩ

CER

CES

CEO

EBO

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

-45

-5

-1

Peak Collector Current

Base Current

-1.5

-100

Collector Power Dissipation

Junction Temperature

Storage Temperature

150

-65 ~ 150

°C

STG

Electrical Characteristics

T = 25°C unless otherwise noted

Symbol

Parameter

Test Condition

Min.

-45

Typ.

Max.

Units

Collector-Emitter Breakdown Voltage

Collector Cut-off Current

Emitter Cut-off Current

I = -10mA, I =0

CEO

CBO

EBO

= -30V, I =0

-0.1

µA

= -5V, I =0

DC Current Gain

= -2V, I = -5mA

FE1

FE2

FE3

= -2V, I = -150mA

250

= -2V, I = -500mA

(sat)

(on)

Collector-Emitter Saturation Voltage

Base-Emitter On Voltage

I = -500mA, I = -50mA

-0.5

-1

= -2V, I = -500mA

Current Gain Bandwidth Product

= -5V, I = -10mA,

100

MHz

f=50MHz

BC636 Rev. C2

www.fairchildsemi.com

12 3 4 5

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