BC636-10

更新时间： 2024-11-11 08:49:35

品牌	Logo	应用领域
美微科 - MCC		晶体晶体管
页数	文件大小	规格书
2页	355K
描述
PNP Epitaxial Silicon Transistors

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中文翻译

获取价格

数据手册

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BC636-10 数据手册

M C C

BC636-10

BC636-16

BC638

ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents

20736 Marilla Street Chatsworth

ꢆꢋꢅꢌꢍꢎꢍꢍ

ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ

Micro Commercial Components

BC640

Features

Through Hole Package

PNP Epitaxial

Silicon Transistors

Capable of 830mWatts of Power Dissipation

Lead Free Finish/RoHS Compliant ("P" Suffix designates

RoHS Compliant. See ordering information)

Epoxy meets UL 94 V-0 flammability rating

Moisure Sensitivity Level 1

TO-92

Maximum Ratings

Symbol

Rating

Value

-45

-60

-100

-45

Unit

Collector-Emitter Voltage

BC636

BC638

BC640

BC636

BC638

BC640

V_CEO

V_CBO

Collector-Base Voltage

-60

-80

V_EBO

I_C

Emitter-Base Voltage

Collector Current

-5.0

-1.0

I_B

T_J

Base Current

Junction Temperature

Storage Temperature

-100

-65 to +150

℃

T_STG

Electrical Characteristics @ 25°C Unless Otherwise Specified

Symbol

Parameter

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

(I_C=-1mAdc,I_B=0)

BC636

BC638

BC640

-45

-60

-80

---

Vdc

V_(BR)CEO

I_CBO

I_EBO

Collector Cutoff Current

(V_CB=-30Vdc, I_E=0)

Emitter Cutoff Current

(V_EB=-5.0Vdc, I_C=0)

DC Current Gain

μAdc

---

-0.1

---

h_FE(1)

(V_CE=-2Vdc, I_C=-5mAdc)

DC Current Gain

(V_CE=-2Vdc, I_C=-150mAdc) BC636-10

16,BC638,BC640

DC Current Gain

(V_CE=-2Vdc, I_C=-500mAdc)

Collector-Emitter Saturation Voltage

(I_C=-500mAdc,I_B=-50mAdc)

Base-Emitter Voltage

(I_C=-500mAdc, V_CE=-2Vdc)

Transition Frequency

(V_CE=-5.0Vdc, I_C=-50mAdc, f=100MHz)

100

160

250

h_FE(2)

h_FE(3)

V_CE(sat)

V_BE(on)

f_T

BC636-

---

DIMENSIONS

---

-0.5

-1.0

---

Vdc

MHz

INCHES

DIM

MIN

.170

.550

.010

.130

.010

MAX

MIN

4.33

4.30

13.97

0.36

3.30

2.44

MAX

4.83

14.97

0.56

3.96

2.64

NOTE

.190

.590

.020

.160

.104

---

100

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Revision: 1

2011/01/01

中文翻译

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与BC636-10相关器件

型号	品牌	获取价格	描述	数据表
BC636-10-AMMO	NXP	获取价格	TRANSISTOR 1000 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, BIP General Purpose Sma
BC636-10-AP-HF	MCC	获取价格	暂无描述
BC636-16	NXP	获取价格	PNP medium power transistors
BC636-16	ONSEMI	获取价格	High Current Transistors
BC636-16	MCC	获取价格	PNP Epitaxial Silicon Transistors
BC636-16-AMMO	NXP	获取价格	TRANSISTOR 1000 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, BIP General Purpose Sma
BC636-16-AP	MCC	获取价格	Small Signal Bipolar Transistor, 1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, RO
BC636-16-AP-HF	MCC	获取价格	Small Signal Bipolar Transistor,
BC636-16-BP-HF	MCC	获取价格	Small Signal Bipolar Transistor,
BC636-16-T/R	NXP	获取价格	TRANSISTOR 1000 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC, SC-43A, SOT-54