5秒后页面跳转
BC636-16-AP PDF预览

BC636-16-AP

更新时间: 2024-11-11 13:00:31
品牌 Logo 应用领域
美微科 - MCC 晶体晶体管
页数 文件大小 规格书
2页 355K
描述
Small Signal Bipolar Transistor, 1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, ROHS COMPLIANT, PLASTIC PACKAGE-3

BC636-16-AP 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:End Of Life零件包装代码:TO-92
包装说明:CYLINDRICAL, O-PBCY-T3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.64最大集电极电流 (IC):1 A
集电极-发射极最大电压:45 V配置:SINGLE
最小直流电流增益 (hFE):100JEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-T3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:PNP认证状态:Not Qualified
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:SILICON
标称过渡频率 (fT):100 MHzBase Number Matches:1

BC636-16-AP 数据手册

 浏览型号BC636-16-AP的Datasheet PDF文件第2页 
M C C  
BC636-10  
BC636-16  
BC638  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TM  
Micro Commercial Components  
BC640  
Features  
·
·
·
Through Hole Package  
PNP Epitaxial  
Silicon Transistors  
Capable of 830mWatts of Power Dissipation  
Lead Free Finish/RoHS Compliant ("P" Suffix designates  
RoHS Compliant. See ordering information)  
Epoxy meets UL 94 V-0 flammability rating  
Moisure Sensitivity Level 1  
·
·
TO-92  
Maximum Ratings  
A
E
Symbol  
Rating  
Value  
-45  
-60  
-100  
-45  
Unit  
V
V
V
V
Collector-Emitter Voltage  
BC636  
BC638  
BC640  
BC636  
BC638  
BC640  
VCEO  
VCBO  
Collector-Base Voltage  
B
-60  
-80  
V
V
VEBO  
IC  
Emitter-Base Voltage  
Collector Current  
-5.0  
-1.0  
V
A
IB  
TJ  
Base Current  
Junction Temperature  
Storage Temperature  
-100  
-65 to +150  
-65 to +150  
mA  
TSTG  
Electrical Characteristics @ 25°C Unless Otherwise Specified  
C
Symbol  
Parameter  
Min  
Typ  
Max  
Unit  
OFF CHARACTERISTICS  
Collector-Emitter Breakdown Voltage  
(IC=-1mAdc,IB=0)  
BC636  
BC638  
BC640  
-45  
-60  
-80  
---  
---  
Vdc  
Vdc  
Vdc  
V(BR)CEO  
ICBO  
IEBO  
Collector Cutoff Current  
(VCB=-30Vdc, IE=0)  
Emitter Cutoff Current  
(VEB=-5.0Vdc, IC=0)  
DC Current Gain  
D
μAdc  
μAdc  
---  
---  
40  
---  
---  
---  
-0.1  
-0.1  
---  
hFE(1)  
(VCE=-2Vdc, IC=-5mAdc)  
DC Current Gain  
(VCE=-2Vdc, IC=-150mAdc) BC636-10  
16,BC638,BC640  
DC Current Gain  
(VCE=-2Vdc, IC=-500mAdc)  
Collector-Emitter Saturation Voltage  
(IC=-500mAdc,IB=-50mAdc)  
Base-Emitter Voltage  
(IC=-500mAdc, VCE=-2Vdc)  
Transition Frequency  
(VCE=-5.0Vdc, IC=-50mAdc, f=100MHz)  
63  
100  
160  
250  
E
hFE(2)  
hFE(3)  
VCE(sat)  
VBE(on)  
fT  
C
B
BC636-  
G
25  
---  
DIMENSIONS  
---  
---  
---  
-0.5  
-1.0  
---  
Vdc  
Vdc  
MHz  
INCHES  
MM  
DIM  
A
B
C
D
MIN  
.170  
.170  
.550  
.010  
.130  
.010  
MAX  
MIN  
4.33  
4.30  
13.97  
0.36  
3.30  
2.44  
MAX  
4.83  
4.83  
14.97  
0.56  
3.96  
2.64  
NOTE  
.190  
.190  
.590  
.020  
.160  
.104  
---  
100  
E
G
www.mccsemi.com  
1 of 2  
Revision: 1  
2011/01/01  

BC636-16-AP 替代型号

型号 品牌 替代类型 描述 数据表
BC636-16 MCC

功能相似

PNP Epitaxial Silicon Transistors

与BC636-16-AP相关器件

型号 品牌 获取价格 描述 数据表
BC636-16-AP-HF MCC

获取价格

Small Signal Bipolar Transistor,
BC636-16-BP-HF MCC

获取价格

Small Signal Bipolar Transistor,
BC636-16-T/R NXP

获取价格

TRANSISTOR 1000 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC, SC-43A, SOT-54
BC636-16ZL1 ONSEMI

获取价格

High Current Transistors
BC636-AMMO NXP

获取价格

TRANSISTOR 1000 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, BIP General Purpose Sma
BC636-AP MCC

获取价格

Small Signal Bipolar Transistor,
BC636-AP-HF MCC

获取价格

暂无描述
BC636-BP MCC

获取价格

Small Signal Bipolar Transistor,
BC636-BP-HF MCC

获取价格

Small Signal Bipolar Transistor,
BC636BU FAIRCHILD

获取价格

Small Signal Bipolar Transistor, 1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, TO