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BC636-16 PDF预览

BC636-16

更新时间: 2024-11-10 22:19:35
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管
页数 文件大小 规格书
4页 60K
描述
High Current Transistors

BC636-16 数据手册

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BC636, BC636-16, BC638,  
BC640, BC640-16  
High Current Transistors  
PNP Silicon  
http://onsemi.com  
COLLECTOR  
2
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
Unit  
3
Collector-Emitter Voltage  
V
V
V
Vdc  
CEO  
CBO  
EBO  
BASE  
BC636  
BC638  
BC640  
–45  
–60  
–80  
1
Collector-Base Voltage  
Emitter-Base Voltage  
Vdc  
EMITTER  
BC636  
BC638  
BC640  
–45  
–60  
–80  
–5.0  
–0.5  
Vdc  
Adc  
Collector Current — Continuous  
I
C
Total Device Dissipation  
P
D
D
@ T = 25°C  
625  
5.0  
mW  
mW/°C  
A
Derate above 25°C  
1
Total Device Dissipation  
P
2
3
@ T = 25°C  
1.5  
12  
Watts  
mW/°C  
C
Derate above 25°C  
CASE 29  
TO–92  
STYLE 14  
Operating and Storage Junction  
Temperature Range  
T , T  
–55 to  
+150  
°C  
J
stg  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
Thermal Resistance,  
Junction to Ambient  
R
200  
°C/W  
θJA  
ORDERING INFORMATION  
Thermal Resistance,  
Junction to Case  
R
83.3  
°C/W  
θJC  
Device  
Package  
TO–92  
TO–92  
TO–92  
TO–92  
TO–92  
TO–92  
TO–92  
TO–92  
Shipping  
BC636  
5000 Units/Box  
2000/Ammo Pack  
2000/Ammo Pack  
5000 Units/Box  
2000/Ammo Pack  
5000 Units/Box  
2000/Ammo Pack  
5000 Units/Box  
BC636ZL1  
BC636–16ZL1  
BC638  
BC638ZL1  
BC640  
BC640ZL1  
BC640–16  
Semiconductor Components Industries, LLC, 2001  
1
Publication Order Number:  
June, 2000 – Rev. 1  
BC636/D  

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