Datasheet > BC55PAS-Q

BC55PAS-Q

更新时间： 2024-09-19 11:12:27

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
11页	257K
描述
60 V, 1 A PNP medium power transistorsProduction

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BC55PAS-Q 数据手册

BC55xPAS-Q series

60 V, 1 A NPN medium power transistors

2 May 2023

Product data sheet

1. General description

NPN medium power transistor series encapsulated in an ultra thin DFN2020D-3 (SOT1061D)

leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and

visible and solderable side pads.

2. Features and benefits

•

High collector current capability I_Cand I_CM

•

Reduced Printed-Circuit Board (PCB) area requirements

Exposed heat sink for excellent thermal and electrical conductivity

Two current gain selections

Leadless very small SMD plastic package with medium power capability

Suitable for Automatic Optical Inspection (AOI) of solder joint

Qualified according to AEC-Q101 and recommended for use in automotive applications

3. Applications

•

Linear voltage regulators

Battery driven devices

MOSFET drivers

High-side switches

Power management

Amplifiers

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

V_CEO

collector-emitter

voltage

open base

I_C

collector current

I_CM

h_FE

peak collector current single pulse; t_p≤ 1 ms

DC current gain

BC55PAS-Q

V_CE= 2 V; I_C= 150 mA; T_amb= 25 °C

[1]

250

160

250

BC55-10PAS-Q

BC55-16PAS-Q

100

[1] pulsed; t_p≤ 300 µs; δ ≤ 0.02

12 3 4 5 6 7...11

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