Datasheet > BC560

BC560

更新时间： 2024-11-25 12:51:47

品牌	Logo	应用领域
鲁光 - LGE		晶体晶体管
页数	文件大小	规格书
2页	161K
描述
PNP Epitaxial Silicon Transistor

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中文翻译

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数据手册

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BC560 数据手册

BC556/557/558/559/560

PNP Epitaxial Silicon Transistor

TO-92

1. COLLECTOR

2. BASE

3. EMITTER

Switching and Amplifier

•

High Voltage: BC556, V

Low Noise: BC559, BC560

Complement to BC546 ... BC 550

= -65V

CEO

Absolute Maximum Ratings ^{T =25°C unless otherwise noted}

Symbol

Parameter

Value

Units

Collector-Base Voltage

: BC556

CBO

-80

-50

-30

: BC557/560

: BC558/559

Collector-Emitter Voltage

CEO

: BC556

: BC557/560

: BC558/559

-65

-45

-30

Emitter-Base Voltage

-5

-100

°C

EBO

Collector Current (DC)

Collector Power Dissipation

Junction Temperature

Storage Temperature

500

150

-65 ~ 150

°C

STG

Electrical Characteristics ^{T =25°C unless otherwise noted}

Symbol

Parameter

Collector Cut-off Current

DC Current Gain

Test Condition

Min.

Typ.

Max.

-15

Units

= -30V, I =0

CBO

= -5V, I =2mA

110

800

(sat)

Collector-Emitter Saturation Voltage I = -10mA, I = -0.5mA

-90

-250

-300

-650

I = -100mA, I = -5mA

(sat) Collector-Base Saturation Voltage

I = -10mA, I = -0.5mA

-700

-900

I = -100mA, I = -5mA

(on)

Base-Emitter On Voltage

= -5V, I = -2mA

-600

-660

-750

-800

= -5V, I = -10mA

Current Gain Bandwidth Product

Output Capacitance

= -5V, I = -10mA, f=10MHz

150

MHz

= -10V, I =0, f=1MHz

Noise Figure

: BC556/557/558

: BC559/560

: BC559

= -5V, I = -200µA

1.2

f=1KHz, R =2KΩ

= -5V, I = -200µA

: BC560

R =2KΩ, f=30~15000MHz

Classification

110 ~ 220

200 ~ 450

420 ~ 800

http://www.luguang.cn

Email:lge@luguang.cn

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