Datasheet > BC560

BC560

更新时间： 2024-09-18 06:41:35

品牌	Logo	应用领域
商升特 - SEMTECH		晶体晶体管
页数	文件大小	规格书
2页	139K
描述
PNP Silicon Epitaxial Planar Transistor

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数据手册

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BC560 数据手册

BC556…BC560

PNP Silicon Epitaxial Planar Transistor

for switching and AF amplifier applications

These transistors are subdivided into three groups A,

B and C according to their current gain.

1. Collector 2. Base 3. Emitter

TO-92 Plastic Package

Absolute Maximum Ratings (T_a= 25 C)

Parameter

Symbol

-V_CBO

Value

Unit

Collector Base Voltage

Collector Emitter Voltage

BC556

BC557, BC560

BC558, BC559

BC556

BC557, BC560

BC558, BC559

-V_CEO

Emitter Base Voltage

-V_EBO

-I_C

Collector Current (DC)

Peak Collector Current

Total Power Dissipation

Junction Temperature

Storage Temperature Range

100

-I_CM

P_tot

200

500

T_j

150

T_S

- 65 to + 150

Characteristics at T_a= 25 C

Parameter

Symbol

Min.

Max.

Unit

DC Current Gain

at -V_CE= 5 V, -I_C= 2 mA

Current Gain Group

h_FE

110

200

420

220

450

800

Collector Base Cutoff Current

at -V_CB= 30 V

-I_CBO

-I_EBO

Emitter Base Cutoff Current

at -V_EB= 5 V

100

Collector Base Breakdown Voltage

at -I_C= 100 µA

BC556

-V_(BR)CBO

BC557, BC560

BC558, BC559

BC556

BC557, BC560

BC558, BC559

Collector Emitter Breakdown Voltage

at -I_C= 2 mA

-V_(BR)CEO

Emitter Base Breakdown Voltage

at -I_E= 100 µA

-V_(BR)EBO

SEMTECH ELECTRONICS LTD.

(Subsidiary of Sino-Tech International Holdings Limited, a company

listed on the Hong Kong Stock Exchange, Stock Code: 724)

Dated : 27/12/2007

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